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MTFC8GAMALBH-AIT

Micron Technology

MTFC8GAMALBH-AIT by Micron Technology

MTFC8GAMALBH-AIT by Micron Technology is a NAND flash memory with 8GX8 organization, operating at -40 to 85°C. It features a thin profile package style with 153 terminals and uses parallel programming mode. Ideal for industrial applications requiring high memory density and fast data access.

Median Price

$13.960

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 325 parts In-Stock

1+ parts

$12.800

100+ parts

$11.120

1k+ parts

-

10k+ parts

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325

$12.800

$11.120

-

-

Element14

Singapore . 2,356 parts In-Stock

1+ parts

$15.120

100+ parts

$11.810

1k+ parts

$11.580

10k+ parts

-

2,356

$15.120

$11.810

$11.580

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 7 parts In-Stock

1+ parts

$12.000

100+ parts

-

1k+ parts

-

10k+ parts

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7

$12.000

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Digiode

USA . 1,817 parts In-Stock

1+ parts

$13.576

100+ parts

-

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1,817

$13.576

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Chip Stock

USA . 7,122 parts In-Stock

1+ parts

-

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7,122

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Vyrian

USA . 6,257 parts In-Stock

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6,257

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Cyclops Electronics Ltd

UK . 3,200 parts In-Stock

1+ parts

-

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3,200

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Nova Conductors

Japan . 900 parts In-Stock

1+ parts

-

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900

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Kronex Distribution GmbH

USA . 13 parts In-Stock

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13

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Mil-Aero Solutions, Inc.

USA . 1 parts In-Stock

1+ parts

-

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1

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 429 parts In-Stock

1+ parts

$2.783

100+ parts

-

1k+ parts

-

10k+ parts

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429

$2.783

-

-

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Aztec Data Supply Inc.

USA . 1,010 parts In-Stock

1+ parts

$3.690

100+ parts

-

1k+ parts

-

10k+ parts

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1,010

$3.690

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-

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Advanced Electronics

New Zealand . 69 parts In-Stock

1+ parts

$4.466

100+ parts

$4.243

1k+ parts

$4.243

10k+ parts

-

69

$4.466

$4.243

$4.243

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Ampacity Inc.

Singapore . 1,684 parts In-Stock

1+ parts

$8.970

100+ parts

-

1k+ parts

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10k+ parts

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1,684

$8.970

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Semicontronic

India . 1,335 parts In-Stock

1+ parts

$10.880

100+ parts

$10.608

1k+ parts

$10.554

10k+ parts

-

1,335

$10.880

$10.608

$10.554

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Corphita

USA . 2,093 parts In-Stock

1+ parts

$12.861

100+ parts

-

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2,093

$12.861

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A-Z Elektronik GmbH

Germany . 12,463 parts In-Stock

1+ parts

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12,463

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Continental Prestige Electronics

USA . 6,695 parts In-Stock

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6,695

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Perfect Parts

USA . 3,405 parts In-Stock

1+ parts

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3,405

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GreenTree Electronics

Israel . 2,000 parts In-Stock

1+ parts

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2,000

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Microchip USA

USA . 1,182 parts In-Stock

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1,182

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ChipstoGo Electronic ltd

UK . 1,000 parts In-Stock

1+ parts

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1,000

-

-

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Argo Parts USA

USA . 878 parts In-Stock

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878

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Formix International (Excess)

India . 878 parts In-Stock

1+ parts

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878

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iodParts Technologies Inc.

India . 35 parts In-Stock

1+ parts

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35

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Bastille Electronics

Australia . 10 parts In-Stock

1+ parts

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10

-

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-

Overview

Experience the next level of performance and reliability with the MTFC8GAMALBH-AIT by Micron Technology. As a trusted leader in flash memory technology, Micron delivers top-notch quality and innovative solutions for a wide range of applications. Whether you're looking to enhance your storage capacity or increase data transfer speeds, this product offers unparalleled value and benefits. Trust Micron to provide you with cutting-edge technology that will take your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the flash memory easy to handle and resistant to damage.

Surface Mount: YES

This allows for easy installation on printed circuit boards, saving space and simplifying the manufacturing process.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures efficient data transfer and synchronization with other system components.

Maximum Operating Temperature: 85 °C

This high operating temperature range allows the flash memory to perform reliably in a variety of environments.

Memory Density: 68719476736 bit

With a high memory density, this flash memory can store a large amount of data efficiently.

Technical Specifications

Flash Memory MTFC8GAMALBH-AIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PBGA-B153

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

68719476736 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

8589934592 words

No. of Words Code:

8G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

2.7

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NAND TYPE

Width:

11.5 mm

Trade Compliance

MTFC8GAMALBH-AIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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