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IS25LQ512B-JULE-TR

Integrated Silicon Solution

IS25LQ512B-JULE-TR by Integrated Silicon Solution

IS25LQ512B-JULE-TR by Integrated Silicon Solution is a 512Kx1 Flash Memory with synchronous operation, 104 MHz clock frequency, and serial interface. It operates at temperatures ranging from -40 to 105 °C and has a memory density of 524288 bits. Ideal for industrial applications requiring reliable non-volatile memory storage in compact devices.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

USA . 87,969 parts In-Stock

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AZTECH Wire

Italy . 872 parts In-Stock

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Continental Prestige Electronics

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Bastille Electronics

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Overview

Unlock the power of reliable and high-quality flash memory with the IS25LQ512B-JULE-TR from Integrated Silicon Solution. This innovative product offers seamless synchronous operation and a compact design, making it perfect for a wide range of applications. With a nominal supply voltage of 3V and a maximum clock frequency of 104 MHz, this flash memory delivers exceptional performance in industrial settings. Trust ISS to provide cutting-edge technology that exceeds expectations and adds value to your projects. Elevate your designs with the IS25LQ512B-JULE-TR today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the flash memory, ensuring it can withstand various environmental conditions.

Surface Mount: YES

Allows for easy installation on the printed circuit board, saving space and making assembly more efficient.

Operating Mode: SYNCHRONOUS

Enhances the overall performance and speed of data transfer during read and write operations.

Nominal Supply Voltage (Vsup): 3V

Optimal voltage for reliable operation and efficiency of the flash memory.

Maximum Operating Temperature: 105 °C

Can operate in high-temperature environments, making it suitable for industrial applications.

Organization: 512KX1

Organized into 512K x 1 bits configuration, providing a high memory density for storing large amounts of data.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high speed performance.

Parallel or Serial: SERIAL

Serial interface allows for efficient data transfer and easy integration with other components in the system.

Memory Density: 524288 bit

High memory density allows for storing a large amount of data in a compact form factor.

Memory IC Type: FLASH

Flash memory technology provides fast read and write speeds, making it ideal for applications requiring high-speed data access.

Technical Specifications

Flash Memory IS25LQ512B-JULE-TR attributes and parameters. Explore more Flash Memory devices from Integrated Silicon Solution

Specs

Maximum Clock Frequency (fCLK):

104 MHz

JESD-30 Code:

R-PDSO-N8

Length:

3 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

3

Maximum Seated Height:

.6 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

2 mm

Trade Compliance

IS25LQ512B-JULE-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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