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MTFC16GAKAEJP-4MIT

Micron Technology

MTFC16GAKAEJP-4MIT by Micron Technology

MTFC16GAKAEJP-4MIT by Micron Technology is a 16GX8 Flash Memory with 17179869184 words capacity. Operating in synchronous mode, it has a memory width of 8 and memory density of 137438953472 bit. Ideal for industrial applications, this very thin profile package offers parallel programming with a terminal pitch of 0.5 mm.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 10,300 parts In-Stock

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10,300

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Vyrian

USA . 4,848 parts In-Stock

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4,848

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Digiode

USA . 1,954 parts In-Stock

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1,954

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Cyclops Electronics Ltd

UK . 1,674 parts In-Stock

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1,674

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Conversion2

USA . 195 parts In-Stock

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195

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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AZTECH Wire

Italy . 453 parts In-Stock

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$5.307

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453

$5.307

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Ampacity Inc.

Singapore . 556 parts In-Stock

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$7.000

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556

$7.000

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QUARKTWIN TECHNOLOGY LTD

USA . 15,691 parts In-Stock

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Microchip USA

USA . 2,572 parts In-Stock

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Continental Prestige Electronics

USA . 2,217 parts In-Stock

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2,217

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Aranea Global

USA . 1,000 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Kepictronics

USA . 875 parts In-Stock

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875

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Argo Parts USA

USA . 793 parts In-Stock

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Corphita

USA . 757 parts In-Stock

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Alle Elektronik GmbH

Germany . 723 parts In-Stock

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723

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Overview

Experience top-of-the-line performance and reliability with Micron Technology's MTFC16GAKAEJP-4MIT flash memory. Crafted with precision and cutting-edge technology, this product offers unparalleled speed and efficiency for a wide range of applications. Whether you're a professional in need of high-speed data storage or a tech enthusiast looking to enhance your device's capabilities, this flash memory delivers exceptional value and performance. Trust in Micron Technology's expertise to elevate your technology experience.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material is durable and lightweight, making it ideal for portable devices.

Surface Mount:

YES - Allows for easy installation on PCBs, saving time and effort during manufacturing.

Package Shape:

RECTANGULAR - Provides a compact design that is space-efficient in electronic devices.

Operating Mode:

SYNCHRONOUS - Ensures efficient data transfer and synchronization within the memory module.

No. of Terminals:

153 - Offers high connectivity options for versatile usage in different applications.

Package Style:

GRID ARRAY, VERY THIN PROFILE, FINE PITCH - Enables a high-density memory solution that saves space on the PCB.

Maximum Operating Temperature:

85 °C - Allows for reliable operation in a wide range of environmental conditions.

Organization:

16GX8 - Provides high capacity and efficiency for storing and accessing data.

Minimum Operating Temperature:

40 °C - Ensures reliability even in extreme cold temperatures.

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu) - Offers corrosion resistance and a reliable connection for long-term use.

Terminal Position:

BOTTOM - Facilitates easy integration into circuits and reduces signal interference.

Maximum Seated Height:

1 mm - Ensures compatibility with slim electronic devices with limited space.

Width:

11.5 mm - Compact size allows for easy integration into various electronic designs.

Minimum Supply Voltage (Vsup):

2.7 V - Low power consumption for energy-efficient operation.

Maximum Time At Peak Reflow Temperature:

30s - Ensures proper soldering during manufacturing, improving product reliability.

Peak Reflow Temperature:

260 °C - Suitable for lead-free soldering processes, meeting environmental regulations.

Length:

13 mm - Provides a balanced form factor for easy handling and installation.

Programming Voltage (V):

2.7 - Compatible with standard programming tools for easy configuration.

Temperature Grade:

INDUSTRIAL - Designed to meet industrial specifications for reliable performance in harsh environments.

Technology:

CMOS - Offers low power consumption and high-speed data processing capabilities.

Parallel or Serial:

PARALLEL - Enables fast data transfer rates for efficient operation in data-intensive applications.

Terminal Form:

BALL - Provides a reliable connection and easy installation during manufacturing processes.

No. of Words:

17179869184 words - High storage capacity for large amounts of data in a single memory module.

Memory Width:

8 - Allows for efficient data transfer and access within the memory module.

Terminal Pitch:

0.5 mm - Fine pitch design for high-density memory solutions in compact electronic devices.

No. of Words Code:

16G - Indicates the capacity of the memory module for storing data.

Maximum Supply Voltage (Vsup):

3.6 V - Allows for safe operation within the specified voltage range for long-term reliability.

Memory Density:

137438953472 bit - High-density storage for extensive data storage requirements.

Memory IC Type:

FLASH CARD - Provides fast read and write speeds for seamless data access and transfer.

Technical Specifications

Flash Memory MTFC16GAKAEJP-4MIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PBGA-B153

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

137438953472 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

17179869184 words

No. of Words Code:

16G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

2.7

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

11.5 mm

Trade Compliance

MTFC16GAKAEJP-4MIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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