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IS25WP064A-JMLE-TR

Integrated Silicon Solution

IS25WP064A-JMLE-TR by Integrated Silicon Solution

IS25WP064A-JMLE-TR by Integrated Silicon Solution is a 64Mb Flash Memory with 8MX8 organization, operating at 133MHz clock frequency. It has a supply voltage range of 1.65V to 1.95V and is ideal for industrial applications requiring high-speed synchronous operation in small outline packages.

Median Price

$1.515

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 23 parts In-Stock

1+ parts

$1.515

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23

$1.515

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Vyrian

USA . 5,766 parts In-Stock

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5,766

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 5,102 parts In-Stock

1+ parts

$1.515

100+ parts

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1k+ parts

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10k+ parts

$1.485

5,102

$1.515

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$1.485

Argo Parts USA

USA . 2,009 parts In-Stock

1+ parts

$1.515

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2,009

$1.515

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Corohmni

South Africa . 216 parts In-Stock

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$2.245

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216

$2.245

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Aztec Data Supply Inc.

USA . 243 parts In-Stock

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$2.330

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243

$2.330

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AZTECH Wire

Italy . 348 parts In-Stock

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$18.924

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348

$18.924

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Netroflash

USA . 50 parts In-Stock

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100+ parts

$1.485

1k+ parts

$1.439

10k+ parts

$1.409

50

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$1.485

$1.439

$1.409

Overview

Unlock the power of advanced technology with the IS25WP064A-JMLE-TR Flash Memory by Integrated Silicon Solution. With a focus on quality and reliability, ISS delivers cutting-edge solutions for a variety of applications. This flash memory offers seamless integration, high performance, and efficient data storage capabilities. Experience the value of smooth operation, increased productivity, and enhanced functionality with this top-notch product. Upgrade your systems with ISS and elevate your performance to the next level.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material provides durability and protection for the flash memory, making it a reliable choice for long-term use.

Surface Mount:

YES - This feature allows for easy integration into various electronic devices, making it suitable for compact designs.

Package Shape:

RECTANGULAR - The rectangular shape allows for efficient use of space in circuit board layouts, optimizing overall system design.

Operating Mode:

SYNCHRONOUS - Synchronous operation ensures precise data transfer and synchronization, enhancing overall performance.

Nominal Supply Voltage / Vsup (V):

1.8 - The low voltage requirement makes this flash memory energy-efficient and compatible with a wide range of devices.

No. of Terminals:

16 - The high number of terminals provides flexibility in connectivity and supports complex data transfer requirements.

Package Style (Meter):

SMALL OUTLINE - The small outline package style enables the flash memory to be used in space-constrained applications without sacrificing performance.

Maximum Operating Temperature:

105 °C - The high operating temperature range ensures reliable performance in demanding environments.

Organization:

8MX8 - The organization layout allows for efficient data storage and retrieval, maximizing memory capacity and speed.

Minimum Operating Temperature:

40 °C - The low operating temperature range ensures the flash memory can withstand extreme cold conditions.

Terminal Position:

DUAL - Dual terminal positions provide increased stability and robustness in connection points, enhancing overall durability.

Maximum Seated Height:

2.65 mm - The low seated height allows for a slim profile design, ideal for applications with height restrictions.

Maximum Clock Frequency (fCLK):

133 MHz - The high clock frequency facilitates fast data transfer rates, improving overall system efficiency.

Width:

7.49 mm - The compact width dimension makes the flash memory suitable for use in small electronic devices.

Minimum Supply Voltage (Vsup):

1.65 V - The low minimum supply voltage requirement enhances energy efficiency and compatibility with low-power devices.

Length:

10.31 mm - The moderate length dimension offers a balance between compact size and functionality, making it versatile for various applications.

Programming Voltage (V):

1.8 - The programming voltage simplifies customization and configuration of the flash memory for specific use cases.

Temperature Grade:

INDUSTRIAL - The industrial temperature grade ensures reliable performance in harsh industrial environments.

Technology:

CMOS - The CMOS technology offers low power consumption and high speed operation, making it an efficient choice for flash memory.

Parallel or Serial:

SERIAL - Serial operation provides efficient data transfer and compatibility with modern electronic systems.

Terminal Form:

GULL WING - The gull wing terminal form provides secure and reliable connections, enhancing the flash memory's durability.

No. of Words:

8388608 words - The high number of words capacity allows for extensive data storage and retrieval capabilities.

Memory Width:

8 - The memory width of 8 bits enables efficient data processing and compatibility with standard data formats.

Terminal Pitch:

1.27 mm - The small terminal pitch enables high-density mounting and precise connections in compact electronic designs.

No. of Words Code:

8M - The words code of 8M indicates a large memory capacity, suitable for handling extensive data storage requirements.

Maximum Supply Voltage (Vsup):

1.95 V - The maximum supply voltage tolerance ensures compatibility with a wide range of power sources, enhancing versatility.

Memory Density:

67108864 bit - The high memory density accommodates large amounts of data in a compact form factor, making it ideal for high-capacity applications.

Memory IC Type:

FLASH - The flash memory IC type offers non-volatile storage capabilities, allowing data to be retained even when power is removed.

Technical Specifications

Flash Memory IS25WP064A-JMLE-TR attributes and parameters. Explore more Flash Memory devices from Integrated Silicon Solution

Specs

Maximum Clock Frequency (fCLK):

133 MHz

JESD-30 Code:

R-PDSO-G16

Length:

10.31 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

16

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

1.8

Maximum Seated Height:

2.65 mm

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.49 mm

Trade Compliance

IS25WP064A-JMLE-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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