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IS25WP512M-JLLE-TR

Integrated Silicon Solution

IS25WP512M-JLLE-TR by Integrated Silicon Solution

IS25WP512M-JLLE-TR by Integrated Silicon Solution is a 64MX8 Flash Memory with 536870912 bit memory density. Operating at 133 MHz, it has a supply voltage of 1.65V to 1.95V and temperature range of -40°C to 105°C. Ideal for industrial applications requiring high-speed synchronous operation in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,776 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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AZTECH Wire

Italy . 797 parts In-Stock

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$7.529

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797

$7.529

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Bastille Electronics

Australia . 18 parts In-Stock

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Overview

Looking for a reliable flash memory solution? Look no further than the IS25WP512M-JLLE-TR by Integrated Silicon Solution. With a commitment to quality and cutting-edge technology, ISS is a trusted manufacturer in the industry. This flash memory device is perfect for a wide range of applications, offering fast and efficient data storage capabilities. Say goodbye to slow loading times and hello to seamless performance with this top-of-the-line product. Upgrade your devices today with ISS's IS25WP512M-JLLE-TR and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components, making the product long-lasting.

Surface Mount: YES

Allows for easy installation on circuit boards, saving time and effort during assembly.

Maximum Operating Temperature: 105 °C

Can withstand high temperatures, making it suitable for industrial applications where heat resistance is important.

Organization: 64MX8

Offers a high memory capacity of 64 megabytes organized in a matrix of 64 rows and 8 columns, providing ample storage space.

Technology: CMOS

CMOS technology ensures low power consumption and efficient operation, extending the product's battery life.

Parallel or Serial: SERIAL

Serial communication allows for faster data transfer speeds and more efficient use of the memory space.

Technical Specifications

Flash Memory IS25WP512M-JLLE-TR attributes and parameters. Explore more Flash Memory devices from Integrated Silicon Solution

Specs

Alternate Memory Width:

1

Maximum Clock Frequency (fCLK):

133 MHz

JESD-30 Code:

R-PDSO-N8

Length:

8 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

1.8

Maximum Seated Height:

.8 mm

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6 mm

Trade Compliance

IS25WP512M-JLLE-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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