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IS37SML01G1-MLI-TR

Integrated Silicon Solution

IS37SML01G1-MLI-TR by Integrated Silicon Solution

IS37SML01G1-MLI-TR by Integrated Silicon Solution is a 128MX8 SLC NAND flash memory with 3.3V programming voltage and 104 MHz clock frequency. Ideal for industrial applications, it operates in synchronous mode with a temperature range of -40 to 85 °C, featuring a small outline package style for surface mount assembly.

Median Price

$3.650

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$3.650

100+ parts

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150

$3.650

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Vyrian

USA . 2,658 parts In-Stock

1+ parts

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2,658

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 3,894 parts In-Stock

1+ parts

$3.650

100+ parts

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3,894

$3.650

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Continental Prestige Electronics

USA . 1,479 parts In-Stock

1+ parts

$3.650

100+ parts

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$3.577

1,479

$3.650

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$3.577

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$3.650

100+ parts

$3.577

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1,000

$3.650

$3.577

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AZTECH Wire

Italy . 212 parts In-Stock

1+ parts

$13.716

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212

$13.716

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Overview

Unlock the power of high-quality flash memory with IS37SML01G1-MLI-TR by Integrated Silicon Solution. With a focus on innovation and reliability, ISS is a leading manufacturer in the industry. Ideal for a wide range of applications, this small outline flash memory offers synchronous operation, industrial-grade temperature tolerance, and a generous memory density of 1073741824 bits. Get consistent performance and peace of mind with this top-of-the-line product that delivers value and efficiency to customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight casing for the flash memory, making it ideal for portable devices.

Surface Mount: YES

Ease of installation and compatibility with modern PCB designs.

Nominal Supply Voltage / Vsup (V): 3.3

Low power consumption and compatibility with common power supply standards.

Maximum Clock Frequency (fCLK): 104 MHz

High clock frequency allows for fast data transfer and processing speeds.

Memory Density: 1073741824 bit

High memory density allows for storing a large amount of data in a compact form factor.

Technical Specifications

Flash Memory IS37SML01G1-MLI-TR attributes and parameters. Explore more Flash Memory devices from Integrated Silicon Solution

Specs

Maximum Clock Frequency (fCLK):

104 MHz

JESD-30 Code:

R-PDSO-G16

Length:

10.31 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

16

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

3.3

Maximum Seated Height:

2.65 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Type:

SLC NAND TYPE

Width:

7.49 mm

Trade Compliance

IS37SML01G1-MLI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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