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IS37SML01G1-LLI-TR

Integrated Silicon Solution

IS37SML01G1-LLI-TR by Integrated Silicon Solution

IS37SML01G1-LLI-TR by Integrated Silicon Solution is a 128MX8 SLC NAND flash memory with 3.3V programming voltage and 104 MHz clock frequency. Ideal for industrial applications, it operates in synchronous mode with a temperature range of -40 to 85 °C and offers a memory density of 1073741824 bits.

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Vyrian

USA . 17,659 parts In-Stock

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Nova Conductors

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Aztec Data Supply Inc.

USA . 175 parts In-Stock

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$4.890

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Corohmni

South Africa . 234 parts In-Stock

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AZTECH Wire

Italy . 547 parts In-Stock

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Infinite Electronics LLP (Excess)

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Continental Prestige Electronics

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Authorized Procurement Solutions

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Argo Parts USA

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Robosynatics

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Lucentia Tech

USA . 150 parts In-Stock

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Bastille Electronics

Australia . 120 parts In-Stock

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Overview

Unlock the power of reliable and high-quality flash memory with the IS37SML01G1-LLI-TR by Integrated Silicon Solution. Designed for industrial applications, this compact and efficient memory module offers a seamless and synchronous operating mode with a maximum clock frequency of 104 MHz. With a wide temperature range and durable plastic/epoxy package body material, this flash memory ensures top-notch performance in any environment. Trust in ISS's expertise in memory technology and elevate your devices with the IS37SML01G1-LLI-TR for unparalleled speed, reliability, and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package body ensures durability and protection for the flash memory.

Surface Mount: YES

Being surface mount enables easy placement and soldering onto circuit boards, simplifying assembly processes.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of space and compatibility with standard PCB designs.

Operating Mode: SYNCHRONOUS

Synchronous operation enhances data transfer speed and reliability, making it ideal for high-performance applications.

Nominal Supply Voltage / Vsup (V): 3.3

A nominal supply voltage of 3.3V ensures compatibility with a wide range of devices and power sources.

No. of Terminals: 8

With 8 terminals, this flash memory chip offers versatile connectivity options for various system configurations.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

The small outline, heat sink/slug, and very thin profile design make this flash memory suitable for compact and space-constrained applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this flash memory can withstand extended usage in industrial environments.

Organization: 128MX8

With an organization of 128Mx8, this flash memory provides high capacity and efficient data storage capabilities.

Minimum Operating Temperature: -40 °C

The flash memory's ability to operate at temperatures as low as -40°C ensures reliability in harsh cold environments.

Terminal Position: DUAL

The dual terminal position offers flexibility in PCB layout and connection options for seamless integration into a system.

Maximum Seated Height: 0.85 mm

A maximum seated height of 0.85mm allows for a low-profile design, ideal for slim devices and space-saving applications.

Maximum Clock Frequency (fCLK): 104 MHz

With a maximum clock frequency of 104MHz, this flash memory delivers fast data processing and access speeds for efficient performance.

Width: 6 mm

The compact 6mm width of the flash memory chip allows for easy integration into tight spaces and small electronic devices.

Minimum Supply Voltage (Vsup): 2.7 V

The minimum supply voltage of 2.7V ensures compatibility with low-power applications and energy-efficient devices.

Type: SLC NAND TYPE

The SLC NAND type technology offers superior reliability, endurance, and performance for critical data storage applications.

Length: 8 mm

The 8mm length of the flash memory chip provides a compact form factor for space-constrained designs.

Programming Voltage (V): 3.3

The programming voltage of 3.3V ensures efficient and reliable data programming for the flash memory.

Temperature Grade: INDUSTRIAL

Designed for industrial-grade applications, this flash memory chip can withstand harsh environmental conditions and extended operational hours.

Technology: CMOS

The CMOS technology used in this flash memory chip provides low power consumption and high-speed operation for optimized performance.

Parallel or Serial: SERIAL

The serial interface enables streamlined data transfer and simplified integration with a wide range of host devices.

Terminal Form: NO LEAD

The no-lead terminal form ensures reliable and robust connections for long-lasting performance.

No. of Words: 134217728 words

With a high number of words, this flash memory chip offers ample storage capacity for various data-intensive applications.

Memory Width: 8

The memory width of 8 bits allows for efficient data processing and storage capabilities in the flash memory.

Terminal Pitch: 1.27 mm

The 1.27mm terminal pitch provides a standard spacing for easy soldering and connection in PCB layouts.

No. of Words Code: 128M

The 128M words code signifies the high data storage capacity and efficient organization of this flash memory chip.

Maximum Supply Voltage (Vsup): 3.6 V

With a maximum supply voltage of 3.6V, this flash memory chip offers compatibility with a wide range of power sources and voltage levels.

Memory Density: 1073741824 bit

The high memory density of 1073741824 bits provides ample storage capacity for storing large volumes of data securely.

Memory IC Type: FLASH

The FLASH memory IC type ensures fast read and write speeds, reliable data storage, and versatile application support.

Technical Specifications

Flash Memory IS37SML01G1-LLI-TR attributes and parameters. Explore more Flash Memory devices from Integrated Silicon Solution

Specs

Maximum Clock Frequency (fCLK):

104 MHz

JESD-30 Code:

R-PDSO-N8

Length:

8 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

3.3

Maximum Seated Height:

.85 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Type:

SLC NAND TYPE

Width:

6 mm

Trade Compliance

IS37SML01G1-LLI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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