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MT35XU256ABA1G12-0AAT

Micron Technology

MT35XU256ABA1G12-0AAT by Micron Technology

Micron Technology's MT35XU256ABA1G12-0AAT is a 256MX1 flash memory with 268M words. Operating at 166MHz, it has a voltage range of 1.7V to 2V and withstands industrial temperatures from -40°C to 105°C. Ideal for applications requiring high-speed synchronous operation in compact devices.

Median Price

$7.695

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 997 parts In-Stock

1+ parts

$6.950

100+ parts

$5.970

1k+ parts

$5.620

10k+ parts

$5.460

997

$6.950

$5.970

$5.620

$5.460

DigiKey

USA . 853 parts In-Stock

1+ parts

$8.440

100+ parts

$7.253

1k+ parts

$6.842

10k+ parts

-

853

$8.440

$7.253

$6.842

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 107 parts In-Stock

1+ parts

$6.992

100+ parts

-

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107

$6.992

-

-

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Chip Stock

USA . 24,100 parts In-Stock

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24,100

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Vyrian

USA . 6,624 parts In-Stock

1+ parts

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6,624

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Bristol Electronics

USA . 2,291 parts In-Stock

1+ parts

-

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2,291

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

-

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 603 parts In-Stock

1+ parts

$3.940

100+ parts

-

1k+ parts

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10k+ parts

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603

$3.940

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-

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Corphita

USA . 2,036 parts In-Stock

1+ parts

$6.624

100+ parts

-

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10k+ parts

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2,036

$6.624

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GreenTree Electronics

Israel . 17,500 parts In-Stock

1+ parts

-

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17,500

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Microchip USA

USA . 3,541 parts In-Stock

1+ parts

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3,541

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Infinite Electronics LLP (Excess)

. 2,296 parts In-Stock

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2,296

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

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2,000

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Aranea Global

USA . 100 parts In-Stock

1+ parts

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100+ parts

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100

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Overview

Unlock the power of cutting-edge technology with the MT35XU256ABA1G12-0AAT by Micron Technology. Designed with precision and expertise, this Flash Memory offers unparalleled performance and reliability for a wide range of applications. From automotive to industrial use, this product delivers seamless operation and efficiency. Experience the advantage of high-quality materials and advanced features that guarantee optimal functionality. Embrace innovation with Micron Technology and elevate your projects to new heights with the MT35XU256ABA1G12-0AAT.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the flash memory, making it suitable for a variety of operating environments.

Surface Mount: YES

The ability to be surface mounted allows for easy integration into electronic devices, saving space and simplifying the assembly process.

Operating Mode: SYNCHRONOUS

Synchronous operation helps in achieving higher data transfer speeds and efficient communication with the host device.

Nominal Supply Voltage / Vsup (V): 1.8

The low nominal supply voltage ensures energy efficiency and helps in reducing power consumption.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature, this flash memory can withstand harsh environmental conditions and maintain performance.

Memory Density: 268435456 bit

The high memory density allows for storing a large amount of data, making it suitable for applications that require extensive storage capacity.

Technical Specifications

Flash Memory MT35XU256ABA1G12-0AAT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

166 MHz

JESD-30 Code:

R-PBGA-B24

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

24

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

1.8

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Trade Compliance

MT35XU256ABA1G12-0AAT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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