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IS25WP512M-RHLA3

Integrated Silicon Solution

IS25WP512M-RHLA3 by Integrated Silicon Solution

IS25WP512M-RHLA3 by Integrated Silicon Solution is a 64MX8 NOR type flash memory with a density of 536870912 bit. It operates at a max clock frequency of 133 MHz and has an endurance of 100000 Write/Erase Cycles. This memory IC is commonly used in automotive applications due to its AEC-Q100 screening level and temperature grade.

Median Price

$11.310

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 457 parts In-Stock

1+ parts

$11.310

100+ parts

$10.200

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457

$11.310

$10.200

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EBV Elektronik

Germany . 480 parts In-Stock

1+ parts

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480

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 87 parts In-Stock

1+ parts

$8.368

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87

$8.368

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Vyrian

USA . 354 parts In-Stock

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354

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Netroflash

USA . 100 parts In-Stock

1+ parts

$8.368

100+ parts

$8.200

1k+ parts

$7.949

10k+ parts

$7.782

100

$8.368

$8.200

$7.949

$7.782

AZTECH Wire

Italy . 889 parts In-Stock

1+ parts

$8.427

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Overview

Experience the next level of performance with the IS25WP512M-RHLA3 by Integrated Silicon Solution. As a leading manufacturer in the industry, ISS guarantees top-notch quality and reliability. This flash memory device is designed to meet the demands of various applications, providing seamless storage solutions. With its advanced features and exceptional value, customers can enjoy faster data transfer, increased efficiency, and enhanced productivity. Say goodbye to lagging systems and hello to a superior user experience. Upgrade to the IS25WP512M-RHLA3 today and unlock the full potential of your devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the flash memory easy to handle and resistant to damage.

Surface Mount: YES

Surface mount technology allows for easy integration onto circuit boards, saving space and enabling efficient assembly.

Nominal Supply Voltage / Vsup (V): 1.8

The low supply voltage helps in reducing power consumption and heat generation, making the flash memory more energy efficient.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this flash memory can withstand harsh environmental conditions, making it suitable for automotive applications.

Organization: 64MX8

The 64MX8 organization means the flash memory has a high storage capacity of 536870912 bits, allowing for ample data storage.

Maximum Clock Frequency (fCLK): 133 MHz

The high clock frequency enables fast data transfer rates, making this flash memory suitable for high-performance applications.

Type: NOR TYPE

NOR flash memory provides fast read speeds and random access capabilities, making it ideal for applications that require quick data retrieval.

Endurance: 100000 Write/Erase Cycles

With a high endurance rating, this flash memory can withstand frequent read/write operations, ensuring long-term reliability.

Serial Bus Type: SPI

The SPI interface allows for easy communication with a wide range of devices, making this flash memory versatile and compatible with various systems.

Technical Specifications

Flash Memory IS25WP512M-RHLA3 attributes and parameters. Explore more Flash Memory devices from Integrated Silicon Solution

Specs

Alternate Memory Width:

1

Maximum Clock Frequency (fCLK):

133 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PBGA-B24

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA24,5X5,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

1.8

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.00026 Amp

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

10

Type:

NOR TYPE

Width:

6 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

IS25WP512M-RHLA3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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