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MT29F4G16ABADAH4-AIT:D

Micron Technology

MT29F4G16ABADAH4-AIT:D by Micron Technology

Micron's MT29F4G16ABADAH4-AIT:D is a 256MX16 SLC NAND flash memory with 3.3V programming voltage. Operating in industrial temperatures (-40 to 85°C), it offers 4294967296-bit memory density for parallel applications. The package features a grid array style with bottom terminal position, suitable for surface mount designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 3,500 parts In-Stock

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3,500

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Vyrian

USA . 3,460 parts In-Stock

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3,460

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Electronic Treasures

USA . 1,065 parts In-Stock

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Digiode

USA . 649 parts In-Stock

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649

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 28,033 parts In-Stock

1+ parts

$3.850

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28,033

$3.850

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Corohmni

South Africa . 173 parts In-Stock

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$5.744

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173

$5.744

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Semicontronic

India . 1,595 parts In-Stock

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$8.000

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$7.800

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$7.760

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1,595

$8.000

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$7.760

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AZTECH Wire

Italy . 615 parts In-Stock

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$14.173

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615

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Ampacity Inc.

Singapore . 1,494 parts In-Stock

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$24.000

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$24.000

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Continental Prestige Electronics

USA . 5,512 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,622 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Argo Parts USA

USA . 1,994 parts In-Stock

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Formix International (Excess)

India . 1,065 parts In-Stock

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Corphita

USA . 281 parts In-Stock

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Microchip USA

USA . 180 parts In-Stock

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180

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Bastille Electronics

Australia . 50 parts In-Stock

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50

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Overview

Elevate your device's performance with the MT29F4G16ABADAH4-AIT:D by Micron Technology, a top-tier flash memory solution designed to enhance speed and reliability. Manufactured by Micron Technology, a leader in memory innovation, this product offers unparalleled quality and durability. Ideal for industrial applications, this flash memory boasts a wide operating temperature range and high memory density. Experience seamless functionality and increased storage capacity with the MT29F4G16ABADAH4-AIT:D, ensuring optimal performance for your electronic devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability, making it a suitable choice for various applications.

Surface Mount: YES

The surface mount feature allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization, making it ideal for compact electronic devices.

Operating Mode: ASYNCHRONOUS

The asynchronous operation mode offers flexibility and fast data access, enhancing the overall performance of the flash memory.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V ensures compatibility with a wide range of systems, increasing versatility.

No. of Terminals: 63

With a high number of terminals, this flash memory chip offers various connectivity options for integration into different devices.

Package Style (Meter): GRID ARRAY

The grid array package style provides a secure and stable mounting solution, minimizing the risk of damage during operation.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature tolerance of 85°C ensures reliable performance in harsh environments.

Organization: 256MX16

The 256MX16 organization offers a large storage capacity and efficient data organization, suitable for data-intensive applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature tolerance of -40°C ensures the flash memory chip remains functional even in extreme cold conditions.

Terminal Finish: TIN SILVER COPPER

The terminal finish of Tin Silver Copper provides excellent conductivity and corrosion resistance, ensuring long-term reliability.

Terminal Position: BOTTOM

The bottom terminal position simplifies installation and maintenance, making it user-friendly for integration in electronic systems.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature of 30 seconds minimizes the risk of thermal damage during the manufacturing process.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance of 260°C ensures proper soldering and secure connections.

Type: SLC NAND TYPE

The SLC NAND type offers fast read and write speeds, making it suitable for high-performance applications.

Programming Voltage (V): 3.3

The programming voltage of 3.3V ensures efficient data programming and operations, enhancing the overall functionality of the flash memory.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures reliable operation in industrial environments with varying temperature conditions.

Technology: CMOS

The CMOS technology offers low power consumption and high noise immunity, extending the battery life of devices using this flash memory.

Parallel or Serial: PARALLEL

The parallel interface allows for faster data transfer rates and simultaneous access to memory, enhancing overall system performance.

Terminal Form: BALL

The ball terminal form offers secure and reliable connections, ensuring stable data transfer and system operation.

No. of Words: 268435456 words

With a high number of words, this flash memory chip offers a vast storage capacity for data-intensive applications.

Memory Width: 16

The memory width of 16 bits enables efficient data processing and retrieval, enhancing system performance.

No. of Words Code: 256M

The 256M words code provides a large address space for storing and accessing a wide range of data, increasing versatility.

Memory Density: 4294967296 bit

The high memory density of 4294967296 bits offers ample storage capacity for storing large amounts of data.

Memory IC Type: FLASH

The flash memory IC type provides non-volatile storage, allowing data to be retained even when power is disconnected.

Technical Specifications

Flash Memory MT29F4G16ABADAH4-AIT:D attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PBGA-B63

JESD-609 Code:

e1

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

63

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Shape:

Package Style (Meter):

GRID ARRAY

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3.3

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Type:

SLC NAND TYPE

Trade Compliance

MT29F4G16ABADAH4-AIT:D Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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