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IS25LQ040B-JNLE-TR

Integrated Silicon Solution

IS25LQ040B-JNLE-TR by Integrated Silicon Solution

IS25LQ040B-JNLE-TR by Integrated Silicon Solution is a 512Kx8 NOR Flash Memory with synchronous operation at 104 MHz clock frequency. Ideal for industrial applications, it has a memory density of 4Mb and operates within a temperature range of -40 to 105°C.

Median Price

$0.504

Lifecycle Status

Suppliers In-Stock

5

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1k+

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Chip Stock

USA . 106,410 parts In-Stock

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Poland . 78,000 parts In-Stock

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USA . 7,467 parts In-Stock

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NexGen Digital

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Nova Conductors

Japan . 750 parts In-Stock

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Aztec Data Supply Inc.

USA . 3,094 parts In-Stock

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Corohmni

South Africa . 250 parts In-Stock

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AZTECH Wire

Italy . 459 parts In-Stock

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Futuretech Components

Singapore . 18,000 parts In-Stock

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Lixinc

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Argo Parts USA

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Continental Prestige Electronics

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Overview

Unlock the power of reliable and high-quality flash memory with the IS25LQ040B-JNLE-TR by Integrated Silicon Solution. Designed for industrial-grade applications, this small outline package offers a seamless synchronous operating mode with a maximum clock frequency of 104 MHz. With a wide temperature range and low supply voltage, this NOR-type memory device provides exceptional performance and durability. Trust ISSI's expertise in flash memory technology to enhance your products and streamline your operations. Elevate your customer experience today with the IS25LQ040B-JNLE-TR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good durability and protection for the flash memory, making it suitable for various operating conditions.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for high-speed data transfer and reliable performance in synchronous applications.

Maximum Clock Frequency (fCLK): 104 MHz

High clock frequency of 104 MHz enables fast read and write operations, enhancing the overall performance of the flash memory.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature tolerance ensures reliable operation in harsh environmental conditions, making it ideal for industrial applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, contributing to the energy efficiency and reliability of the flash memory.

Memory IC Type: FLASH

Being a flash memory IC, it allows for non-volatile storage of data, offering high-speed read and write operations for various applications.

Technical Specifications

Flash Memory IS25LQ040B-JNLE-TR attributes and parameters. Explore more Flash Memory devices from Integrated Silicon Solution

Specs

Additional Features:

CLOCK FREQUENCY FOR READ MODE 33 MHZ

Alternate Memory Width:

1

Maximum Clock Frequency (fCLK):

104 MHz

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

3.9 mm

Trade Compliance

IS25LQ040B-JNLE-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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