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MT29F1G08ABBEAH4-ITX:E

Micron Technology

MT29F1G08ABBEAH4-ITX:E by Micron Technology

Micron Technology's MT29F1G08ABBEAH4-ITX:E is a 128Mx8 SLC NAND flash memory with 1.8V supply voltage, operating from -40 to 85°C. Featuring 100K write/erase cycles, it has a page size of 2K words and sector size of 128K words. Ideal for applications requiring high endurance and reliable data storage in compact devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Cyclops Electronics Ltd

UK . 20,006 parts In-Stock

1+ parts

-

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20,006

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ComSIT Distribution GmbH

Germany . 3,000 parts In-Stock

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3,000

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Vyrian

USA . 2,452 parts In-Stock

1+ parts

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2,452

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Digiode

USA . 2,335 parts In-Stock

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2,335

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Nova Conductors

Japan . 300 parts In-Stock

1+ parts

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300

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 861 parts In-Stock

1+ parts

$4.000

100+ parts

-

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861

$4.000

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Corohmni

South Africa . 409 parts In-Stock

1+ parts

$4.038

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-

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409

$4.038

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Aztec Data Supply Inc.

USA . 58,564 parts In-Stock

1+ parts

$4.730

100+ parts

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58,564

$4.730

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Semicontronic

India . 558 parts In-Stock

1+ parts

$6.000

100+ parts

$5.850

1k+ parts

$5.820

10k+ parts

-

558

$6.000

$5.850

$5.820

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AZTECH Wire

Italy . 462 parts In-Stock

1+ parts

$10.307

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462

$10.307

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RC Electronics

USA . 37,355 parts In-Stock

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37,355

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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A-Z Elektronik GmbH

Germany . 4,710 parts In-Stock

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4,710

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Continental Prestige Electronics

USA . 3,997 parts In-Stock

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3,997

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Argo Parts USA

USA . 3,530 parts In-Stock

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3,530

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Kepictronics

USA . 1,000 parts In-Stock

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1,000

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Bastille Electronics

Australia . 700 parts In-Stock

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700

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Corphita

USA . 274 parts In-Stock

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274

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Microchip USA

USA . 143 parts In-Stock

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143

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Overview

Unlock a world of possibilities with the MT29F1G08ABBEAH4-ITX:E by Micron Technology, a cutting-edge flash memory device designed for high-performance applications. Manufactured with quality and innovation in mind, this product offers unparalleled value and benefits to customers. Whether you're looking to enhance your data storage capabilities or improve system performance, this flash memory solution delivers reliability and efficiency. Experience the advantages of Micron Technology's expertise in flash memory technology and take your projects to the next level with the MT29F1G08ABBEAH4-ITX:E.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material ensures durability and reliability, making this product suitable for various industrial applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent data transfers, increasing the flexibility and speed of the product.

Nominal Supply Voltage: 1.8V

Low nominal supply voltage of 1.8V helps in reducing power consumption and extending the battery life of devices using this flash memory.

Output Characteristics: 3-STATE

3-STATE output characteristics provide for efficient data storage and retrieval, enhancing the performance of the flash memory in multi-tasking applications.

Memory Density: 1073741824 bit

High memory density of over 1 billion bits allows for storing large amounts of data in a compact form factor, making it ideal for high-capacity storage solutions.

Endurance: 100000 Write/Erase Cycles

With a high endurance rating of 100,000 write/erase cycles, this flash memory offers long-lasting reliability and durability for repeated data read/write operations.

Data Polling: YES

Data polling feature enables efficient data retrieval and monitoring, ensuring accurate and timely access to stored information.

Technical Specifications

Flash Memory MT29F1G08ABBEAH4-ITX:E attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Command User Interface:

NO

Data Polling:

YES

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PBGA-B63

Length:

11 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

1K

No. of Terminals:

63

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA63,10X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Page Size (words):

2K

Parallel or Serial:

PARALLEL

Programming Voltage (V):

1.8

Ready or Busy:

YES

Maximum Seated Height:

1 mm

Sector Size (Words):

128K

Maximum Standby Current:

.00005 Amp

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Toggle Bit:

YES

Type:

SLC NAND TYPE

Width:

9 mm

Trade Compliance

MT29F1G08ABBEAH4-ITX:E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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