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MT29F1G08ABBFAH4-ITE:F

Micron Technology

MT29F1G08ABBFAH4-ITE:F by Micron Technology

Micron Technology's MT29F1G08ABBFAH4-ITE:F is a 128MX8 SLC NAND flash memory with 1073741824-bit density. Operating at 1.8V, it offers industrial-grade temperature range of -40 to 85°C. With parallel interface and very thin profile, it suits applications requiring high-speed data storage in compact devices.

Median Price

$8.410

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 1,260 parts In-Stock

1+ parts

$7.680

100+ parts

-

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1,260

$7.680

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Mouser Electronics

USA . 1,076 parts In-Stock

1+ parts

$8.400

100+ parts

-

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10k+ parts

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1,076

$8.400

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-

DigiKey

USA . 1,005 parts In-Stock

1+ parts

$8.420

100+ parts

$7.234

1k+ parts

$6.824

10k+ parts

$6.595

1,005

$8.420

$7.234

$6.824

$6.595

Element14

Singapore . 1,260 parts In-Stock

1+ parts

$12.580

100+ parts

-

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1,260

$12.580

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Newark

USA . 1,260 parts In-Stock

1+ parts

$12.660

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1,260

$12.660

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Future Electronics

Canada . 3,780 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$1.540

10k+ parts

$1.510

3,780

-

-

$1.540

$1.510

EBV Elektronik

Germany . 1,260 parts In-Stock

1+ parts

-

100+ parts

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1,260

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 640 parts In-Stock

1+ parts

$3.002

100+ parts

-

1k+ parts

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10k+ parts

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640

$3.002

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Vyrian

USA . 385 parts In-Stock

1+ parts

$3.100

100+ parts

-

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385

$3.100

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Chip Stock

USA . 24,500 parts In-Stock

1+ parts

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24,500

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Cyclops Electronics Ltd

UK . 6,000 parts In-Stock

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6,000

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NAC Semi

USA . 2,382 parts In-Stock

1+ parts

-

100+ parts

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$2.770

2,382

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$2.770

ComSIT Distribution GmbH

Germany . 914 parts In-Stock

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914

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 2,181 parts In-Stock

1+ parts

$2.690

100+ parts

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2,181

$2.690

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Corphita

USA . 1,995 parts In-Stock

1+ parts

$2.844

100+ parts

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1,995

$2.844

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QUARKTWIN TECHNOLOGY LTD

USA . 20,413 parts In-Stock

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20,413

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A-Z Elektronik GmbH

Germany . 5,670 parts In-Stock

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5,670

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Argo Parts USA

USA . 5,022 parts In-Stock

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5,022

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Perfect Parts

USA . 2,822 parts In-Stock

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2,822

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Continental Prestige Electronics

USA . 1,900 parts In-Stock

1+ parts

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1,900

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Metaverse IC Inc.

Canada . 953 parts In-Stock

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953

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Kepictronics

USA . 757 parts In-Stock

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757

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Aranea Global

USA . 100 parts In-Stock

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100

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GreenTree Electronics

Israel . 84 parts In-Stock

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84

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Overview

Unlock the power of cutting-edge technology with the MT29F1G08ABBFAH4-ITE:F Flash Memory by Micron Technology. As a leader in memory solutions, Micron ensures top-notch quality and reliability in every product. Ideal for industrial applications, this flash memory chip offers lightning-fast performance and high storage capacity. Say goodbye to slow load times and hello to seamless data processing. Upgrade your devices today with Micron's innovative flash memory solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material helps in reducing the overall weight of the product, making it easier to handle and transport.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on PCBs, saving space and making the product suitable for compact designs.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode ensures smooth and efficient data transfer, enhancing the performance of the product.

Nominal Supply Voltage (Vsup): 1.8V

Operating at a low nominal supply voltage of 1.8V helps in reducing power consumption, making the product energy-efficient.

Maximum Operating Temperature: 85°C

With a high maximum operating temperature of 85°C, the product can withstand harsh environmental conditions, ensuring reliability and durability.

Organization: 128MX8

The organization of 128MX8 allows for efficient data storage and retrieval, increasing the overall performance of the flash memory product.

Minimum Operating Temperature: -40°C

With a minimum operating temperature of -40°C, the product is suitable for use in extreme cold environments, making it versatile and reliable.

Terminal Finish: TIN SILVER COPPER

The terminal finish of tin silver copper ensures good electrical conductivity and corrosion resistance, enhancing the longevity of the product.

Maximum Seated Height: 1mm

With a maximum seated height of 1mm, the product has a low profile design, making it suitable for applications with space constraints.

Type: SLC NAND TYPE

The SLC NAND type offers fast read and write speeds, high reliability, and longer lifespan, making it ideal for critical data storage applications.

Technical Specifications

Flash Memory MT29F1G08ABBFAH4-ITE:F attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PBGA-B63

JESD-609 Code:

e1

Length:

11 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

63

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

1.8

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Type:

SLC NAND TYPE

Width:

9 mm

Trade Compliance

MT29F1G08ABBFAH4-ITE:F Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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