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MTFC64GASAQHD-AAT

Micron Technology

MTFC64GASAQHD-AAT by Micron Technology

MTFC64GASAQHD-AAT by Micron Technology is a 64GX8 NAND flash memory with 549755813888 bit density. Operating at 200 MHz, it offers synchronous operation and a very thin profile package style. Ideal for automotive applications due to AEC-Q104 screening level and wide temperature range from -40°C to 105°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,278 parts In-Stock

1+ parts

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2,278

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Vyrian

USA . 1,624 parts In-Stock

1+ parts

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1,624

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 706 parts In-Stock

1+ parts

$7.635

100+ parts

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1k+ parts

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706

$7.635

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Ampacity Inc.

Singapore . 413 parts In-Stock

1+ parts

$12.000

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413

$12.000

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Continental Prestige Electronics

USA . 6,759 parts In-Stock

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6,759

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

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1,000

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Argo Parts USA

USA . 846 parts In-Stock

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846

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Corphita

USA . 659 parts In-Stock

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659

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Overview

Discover the cutting-edge MTFC64GASAQHD-AAT by Micron Technology, a leading manufacturer in the Flash Memory category. Designed with advanced technology and high-quality materials, this product offers unmatched performance and reliability. Perfect for a wide range of applications, this flash memory device delivers exceptional value and benefits to customers by providing fast data storage and retrieval, low power consumption, and a durable design. Upgrade your system with the MTFC64GASAQHD-AAT and experience seamless operation and improved efficiency like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes this flash memory durable and lightweight, ideal for use in various electronic devices.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation of this flash memory, making it suitable for high-volume manufacturing.

Screening Level: AEC-Q104

With AEC-Q104 screening level, this flash memory is designed to meet stringent automotive industry standards for reliability and performance.

Package Shape: RECTANGULAR

The rectangular package shape of this flash memory enables space-efficient PCB layout and integration into compact electronic devices.

Operating Mode: SYNCHRONOUS

The synchronous operating mode of this flash memory ensures fast and efficient data transfer, making it suitable for applications requiring high performance.

No. of Terminals: 153

With 153 terminals, this flash memory provides ample connectivity options and flexibility for integration into various electronic systems.

Package Style: GRID ARRAY, VERY THIN PROFILE, FINE PITCH

The grid array style with very thin profile and fine pitch design of this flash memory allows for high-density mounting and space-saving layout on PCBs.

Maximum Operating Temperature: 105 °C

With a maximum operating temperature of 105°C, this flash memory can reliably operate in high-temperature environments, ensuring consistent performance.

Organization: 64GX8

The 64GX8 organization of this flash memory offers high data storage capacity and efficient data retrieval, making it ideal for handling large volumes of data.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40°C, this flash memory is suitable for use in extreme cold conditions without compromising performance.

Terminal Finish: TIN SILVER COPPER

The tin silver copper terminal finish of this flash memory provides excellent corrosion resistance and ensures reliable electrical connections for enhanced durability.

Technical Specifications

Flash Memory MTFC64GASAQHD-AAT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

200 MHz

Command User Interface:

NO

Data Polling:

NO

Minimum Data Retention Time:

1

JESD-30 Code:

R-PBGA-B153

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

549755813888 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

68719476736 words

No. of Words Code:

64G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA153,14X14,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q104

Maximum Seated Height:

.9 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NAND TYPE

Width:

11.5 mm

Trade Compliance

MTFC64GASAQHD-AAT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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