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GD25Q16CNIGR

Gigadevice Semiconductor

GD25Q16CNIGR by Gigadevice Semiconductor

GD25Q16CNIGR by Gigadevice Semiconductor is a 2MX8 NOR Flash Memory with 120 MHz clock frequency, SPI serial bus type. Operating at -40 to 85 °C, it has 100000 write/erase cycles endurance. Ideal for applications requiring fast data access and reliable storage in compact devices.

Median Price

$0.754

Lifecycle Status

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4

In-Stock Inventory

1k+

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Nova Conductors

Japan . 72 parts In-Stock

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Chip Stock

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Vyrian

USA . 2,326 parts In-Stock

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Netsource Technology, Inc.

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Argo Parts USA

USA . 1,977 parts In-Stock

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Continental Prestige Electronics

USA . 1,020 parts In-Stock

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$0.739

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AZTECH Wire

Italy . 249 parts In-Stock

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Authorized Procurement Solutions

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Netroflash

USA . 100 parts In-Stock

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$0.716

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Overview

Elevate your electronics with the Gigadevice Semiconductor GD25Q16CNIGR Flash Memory. Known for its top-tier quality and reliable performance, this cutting-edge product is designed to take your devices to the next level. Ideal for a wide range of applications, this flash memory offers seamless operation and fast data transfer speeds, making it a must-have for tech enthusiasts and professionals alike. Upgrade your devices today with the superior value and benefits that only Gigadevice Semiconductor can provide.

Feature Benefit Bullets

Surface Mount: YES

The surface mount capability allows for easy and secure installation on PCBs, making this product convenient for electronic assembly.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact design, ideal for space-constrained applications.

Operating Mode: SYNCHRONOUS

The synchronous operation mode ensures high-speed data transfers, making this flash memory product suitable for performance-critical tasks.

Nominal Supply Voltage / Vsup (V): 3.3

With a nominal supply voltage of 3.3V, this flash memory offers compatibility with a wide range of systems and devices.

No. of Terminals: 8

The presence of 8 terminals simplifies the connectivity process, enhancing the ease of integration and use.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

This package style ensures efficient heat dissipation and space-saving benefits, making it an excellent choice for compact designs.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this flash memory can withstand demanding environmental conditions, ensuring reliable performance.

Organization: 2MX8

The 2MX8 organization provides a high memory density in a compact form factor, making it suitable for storage-intensive applications.

Minimum Operating Temperature: -40 °C

The flash memory's ability to operate at temperatures as low as -40°C ensures reliable performance in harsh environments.

Terminal Position: DUAL

The dual terminal position offers design flexibility and ease of connection, making this product versatile and easy to integrate.

Write Protection: HARDWARE/SOFTWARE

The write protection feature, both hardware and software-based, ensures data security and integrity, making this flash memory a reliable storage solution.

Maximum Seated Height: 0.6 mm

The low maximum seated height allows for slim and compact device designs, ideal for space-constrained applications.

Maximum Clock Frequency (fCLK): 120 MHz

With a high maximum clock frequency of 120 MHz, this flash memory can deliver fast data access speeds, suitable for high-performance systems.

Width: 3 mm

The compact width of 3 mm enables easy integration into small electronic devices, making this flash memory a versatile storage solution.

Minimum Supply Voltage (Vsup): 2.7 V

The low minimum supply voltage of 2.7V ensures energy efficiency and compatibility with a wide range of power sources.

Type: NOR TYPE

The NOR type design offers fast read speeds and random access capabilities, making this flash memory suitable for applications requiring quick data retrieval.

Length: 4 mm

The short length of 4 mm allows for space-saving and efficient designs, making this flash memory ideal for compact electronic devices.

Programming Voltage (V): 3.3

The programming voltage of 3.3V ensures compatibility with standard programming systems, simplifying the data storage process.

Technology: CMOS

The CMOS technology used in this flash memory ensures low power consumption and high performance, making it an energy-efficient storage solution.

Parallel or Serial: SERIAL

The serial interface offers a simple and efficient data transfer process, suitable for applications requiring sequential access to stored information.

Terminal Form: NO LEAD

The no-lead terminal form simplifies the soldering process and enhances the product's environmental friendliness, making it a sustainable choice.

Maximum Supply Current: 20 mA

With a maximum supply current of 20 mA, this flash memory offers efficient power usage, ideal for battery-powered devices.

No. of Words: 2097152 words

The large number of words provides ample storage capacity for data-intensive applications, making this flash memory a reliable storage solution.

Memory Width: 8

The memory width of 8 bits allows for efficient data processing and storage, ensuring high-speed performance in data-intensive tasks.

Minimum Data Retention Time: 20

The minimum data retention time of 20 years ensures long-term data integrity and reliability, making this flash memory suitable for archival purposes.

Terminal Pitch: 0.8 mm

The small terminal pitch of 0.8 mm enables high-density packaging and efficient PCB layout, making this flash memory suitable for space-constrained designs.

No. of Words Code: 2M

The 2M words code provides easy identification and compatibility with standard memory configurations, ensuring seamless integration into existing systems.

Maximum Supply Voltage (Vsup): 3.6 V

The high maximum supply voltage of 3.6V offers flexibility in power supply options, making this flash memory suitable for a wide range of applications.

Endurance: 100000 Write/Erase Cycles

With a high endurance of 100,000 write/erase cycles, this flash memory offers reliable and long-lasting data storage capabilities, ideal for frequent data updates.

Serial Bus Type: SPI

The SPI serial bus type offers a simple and efficient communication interface, suitable for applications requiring fast data transfers.

Memory Density: 16777216 bit

The high memory density of 16,777,216 bits provides ample storage capacity for data-intensive applications, ensuring efficient data management.

Memory IC Type: FLASH

The flash memory IC type offers fast data access speeds and high reliability, making it a preferred choice for storage-intensive applications.

Maximum Standby Current: 0.000005 Amp

With a low maximum standby current of 0.000005 Amp, this flash memory offers energy-efficient standby mode operation, ideal for portable devices.

Technical Specifications

Flash Memory GD25Q16CNIGR attributes and parameters. Explore more Flash Memory devices from Gigadevice Semiconductor

Specs

Maximum Clock Frequency (fCLK):

120 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-XDSO-N8

Length:

4 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX8

Package Code:

Package Equivalence Code:

SOLCC8,.12,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Programming Voltage (V):

3.3

Maximum Seated Height:

.6 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000005 Amp

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

NO LEAD

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Type:

NOR TYPE

Width:

3 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

GD25Q16CNIGR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Gigadevice Semiconductor

GigaDevice Semiconductor Inc. (SSE Code: 603986) is a world-leading fabless supplier founded in April 2005 and headquartered in Beijing, China. In addition to our branches and offices in many regions and countries such as Shanghai, Shenzhen, Hefei, Xi'an, Chengdu, Suzhou, Hong Kong, the US, South Korea, Japan, the UK, Germany, and Singapore, GigaDevice's global sales network also provides our customers with fast, high-quality and localized services. GigaDevice's core product lines are Flash, 32-bit general-purpose MCU, smart human-machine interaction sensors, analog products and solutions. GigaDevice's industry-proven products are renowned for high performance and low power consumption.

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