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PC28F128P33TF60A

Micron Technology

PC28F128P33TF60A by Micron Technology

Micron Technology's PC28F128P33TF60A is a 3V NOR flash memory with 8Mx16 organization, operating from -40 to 85°C. It features a page size of 8 words, sector sizes of 16K and 64K words, and a memory density of 134217728 bits. Ideal for industrial applications requiring fast access times and low standby current.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,173 parts In-Stock

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6,173

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Digiode

USA . 2,457 parts In-Stock

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2,457

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Chip Stock

USA . 425 parts In-Stock

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425

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Nova Conductors

Japan . 51 parts In-Stock

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51

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,602 parts In-Stock

1+ parts

$7.000

100+ parts

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1,602

$7.000

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AZTECH Wire

Italy . 206 parts In-Stock

1+ parts

$16.890

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206

$16.890

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Component Stockers USA

USA . 473 parts In-Stock

1+ parts

$99.990

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473

$99.990

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Corphita

USA . 530 parts In-Stock

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530

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Experience superior quality and reliability with the Micron Technology PC28F128P33TF60A Flash Memory. This advanced technology offers a wide range of applications, ensuring seamless performance in various devices. With its high memory density and fast access time, this product provides exceptional value and benefits to customers looking for top-notch storage solutions. Trust in Micron's expertise and innovation to elevate your experience to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the flash memory, making it suitable for various environments.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent read and write functions, increasing efficiency and performance of the flash memory.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V ensures compatibility with a wide range of devices and systems.

No. of Sectors/Size: 4,127

Having a large number of sectors allows for efficient data organization and management within the flash memory.

Memory Density: 134217728 bit

High memory density allows for storing large amounts of data in a compact space, making the flash memory a high-capacity storage solution.

Technical Specifications

Flash Memory PC28F128P33TF60A attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

60 ns

Additional Features:

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

Boot Block:

TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B64

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

4,127

No. of Terminals:

64

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA64,8X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Page Size (words):

8

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3,3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,64K

Maximum Standby Current:

.002 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

28 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

NOR TYPE

Width:

8 mm

Trade Compliance

PC28F128P33TF60A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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