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JS28F00AP33TFA

Micron Technology

JS28F00AP33TFA by Micron Technology

Micron Technology's JS28F00AP33TFA is a 64MX16 Flash Memory with 1073741824 bit memory density. Operating at 3V, it has a max access time of 105ns and supports industrial temperature grade. Ideal for applications requiring high-speed data storage in compact devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 23,600 parts In-Stock

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23,600

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Vyrian

USA . 2,603 parts In-Stock

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2,603

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Digiode

USA . 154 parts In-Stock

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154

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Prism Electronics

USA . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 265 parts In-Stock

1+ parts

$4.414

100+ parts

-

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$4.238

10k+ parts

$4.238

265

$4.414

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$4.238

$4.238

AZTECH Wire

Italy . 932 parts In-Stock

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$21.850

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932

$21.850

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Ampacity Inc.

Singapore . 142 parts In-Stock

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$22.000

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142

$22.000

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Argo Parts USA

USA . 2,440 parts In-Stock

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Corphita

USA . 2,357 parts In-Stock

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2,357

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Continental Prestige Electronics

USA . 2,062 parts In-Stock

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2,062

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Kepictronics

USA . 1,728 parts In-Stock

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1,728

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Perfect Parts

USA . 651 parts In-Stock

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651

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Microchip USA

USA . 398 parts In-Stock

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398

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Unlock the power of high-quality, reliable Flash Memory with the Micron Technology JS28F00AP33TFA. Manufactured by a trusted leader in the industry, this product offers exceptional value and benefits for a wide range of applications. With a focus on quality and performance, this Flash Memory provides customers with a seamless experience and efficient operation. Upgrade your devices today with the Micron Technology JS28F00AP33TFA and experience the difference in speed, reliability, and overall performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the internal components of the flash memory, ensuring reliable operation in various environmental conditions.

Surface Mount: YES

Being surface mount compatible makes the flash memory easy to integrate onto printed circuit boards, saving space and simplifying the assembly process.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster communication and data transfer speeds, enhancing the overall performance of the flash memory.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V ensures compatibility with a wide range of systems and devices, making it a versatile choice for various applications.

No. of Terminals: 56

The high number of terminals enables efficient connectivity and communication with external devices, improving the functionality and flexibility of the flash memory.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, the flash memory can withstand heat and maintain stable performance in demanding industrial environments.

Memory IC Type: FLASH

Being a flash memory IC type, this product provides non-volatile storage capabilities, allowing data to be retained even without power, making it ideal for storing critical information.

Maximum Access Time: 105 ns

The fast maximum access time ensures quick data retrieval and high-speed operation, making the flash memory suitable for applications that require rapid response times.

Technical Specifications

Flash Memory JS28F00AP33TFA attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

105 ns

Additional Features:

TOP BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE

Boot Block:

TOP

JESD-30 Code:

R-PDSO-G56

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

56

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Trade Compliance

JS28F00AP33TFA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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