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JS28F512P33BFD

Micron Technology

JS28F512P33BFD by Micron Technology

Micron Technology's JS28F512P33BFD is a 32MX16 flash memory with 536MB density. Operating at 3V, it offers fast access time of 105ns in industrial temperatures. With parallel interface and bottom boot block, it suits applications requiring high-speed data storage.

Median Price

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Lifecycle Status

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Vyrian

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Bristol Electronics

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Digiode

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Sternenhof Electronics

Switzerland . 576 parts In-Stock

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Classic Components Corporation

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Eagle Technology Solutions

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Nova Conductors

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K-1 Technologies

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Andel Nordic

Denmark . 421 parts In-Stock

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$10.689

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Ampacity Inc.

Singapore . 1,211 parts In-Stock

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AZTECH Wire

Italy . 1,213 parts In-Stock

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Microchip USA

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Corphita

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Perfect Parts

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Aranea Global

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Kepictronics

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Overview

Looking to enhance your electronic devices with top-quality flash memory? Look no further than the JS28F512P33BFD by Micron Technology! This small outline, thin profile memory chip offers reliable performance in industrial-grade applications. With a wide operating temperature range and low supply voltage, this flash memory is perfect for demanding environments. Trust Micron's expertise and innovation to bring you the best in memory technology. Upgrade your products today with the JS28F512P33BFD and experience the benefits of high-quality memory solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ideal for portable devices.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and cost during production.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and coordination, optimizing data transfer and system performance.

Nominal Supply Voltage / Vsup (V): 3

The 3V nominal supply voltage is a common standard in electronics, making integration with existing systems simple.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this flash memory can withstand a wide range of environmental conditions.

Organization: 32MX16

The 32MX16 organization offers a balance between capacity and speed, suitable for a variety of storage and retrieval tasks.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, making the flash memory energy efficient and reliable.

No. of Words: 33554432 words

The large number of words indicates a high-capacity memory, essential for storing a large amount of data.

Memory IC Type: FLASH

Being a flash memory IC, this product offers non-volatile storage, allowing data to be retained even when power is removed.

Maximum Access Time: 105 ns

With a fast maximum access time, this flash memory can quickly retrieve data, improving system responsiveness.

Technical Specifications

Flash Memory JS28F512P33BFD attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

105 ns

Additional Features:

BOTTOM BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE

Boot Block:

BOTTOM

JESD-30 Code:

R-PDSO-G56

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

56

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

14 mm

Trade Compliance

JS28F512P33BFD Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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