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JS28F512P33EFA

Micron Technology

JS28F512P33EFA by Micron Technology

JS28F512P33EFA by Micron Technology is a NOR flash memory with 32MX16 organization, 536MB density, and 105ns access time. It operates at 3V, has a temperature range of -40 to 85°C, and is suitable for industrial applications requiring high-speed parallel memory access.

Median Price

$10.225

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 65 parts In-Stock

1+ parts

$10.225

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65

$10.225

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Chip Stock

USA . 10,200 parts In-Stock

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10,200

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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4,000

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Cyclops Electronics Ltd

UK . 2,880 parts In-Stock

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2,880

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Vyrian

USA . 2,334 parts In-Stock

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2,334

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Digiode

USA . 571 parts In-Stock

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571

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Distributors (Availability)

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Ampacity Inc.

Singapore . 636 parts In-Stock

1+ parts

$2.000

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636

$2.000

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Netroflash

USA . 50 parts In-Stock

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$10.225

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50

$10.225

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AZTECH Wire

Italy . 577 parts In-Stock

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$18.220

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577

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Component Stockers USA

USA . 281 parts In-Stock

1+ parts

$99.990

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$99.990

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A-Z Elektronik GmbH

Germany . 10,638 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,404 parts In-Stock

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Kepictronics

USA . 4,032 parts In-Stock

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Perfect Parts

USA . 3,083 parts In-Stock

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3,083

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RC Electronics

USA . 2,781 parts In-Stock

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Corphita

USA . 1,066 parts In-Stock

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Futuretech Components

Singapore . 980 parts In-Stock

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980

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Microchip USA

USA . 399 parts In-Stock

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399

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Overview

Enhance your electronic devices with the JS28F512P33EFA by Micron Technology, a top-tier manufacturer in the industry. This high-quality flash memory device offers unparalleled reliability and performance, making it ideal for a wide range of applications. From industrial settings to consumer electronics, this product provides fast access times and ample memory density to meet all your needs. Upgrade your technology today with the JS28F512P33EFA and experience the superior value and benefits that only Micron can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection for the flash memory, making it a reliable choice for long-term use.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V ensures compatibility with a wide range of devices, offering versatility in applications.

Organization: 32MX16

The organization of 32 megabytes x 16 bits allows for efficient data storage and retrieval, making it suitable for high-capacity storage requirements.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high speed performance, making the flash memory energy efficient and reliable.

Maximum Access Time: 105 ns

With a maximum access time of 105 nanoseconds, this flash memory offers quick read and write speeds, ideal for demanding computing tasks.

Technical Specifications

Flash Memory JS28F512P33EFA attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

105 ns

Additional Features:

IT ALSO OPERATES IN ASYNCHRONOUS MODE

JESD-30 Code:

R-PDSO-G56

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

56

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3

Maximum Seated Height:

1.2 mm

Maximum Supply Current:

31 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

14 mm

Trade Compliance

JS28F512P33EFA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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