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MT29F2G08ABAEAWP-ITX:E

Micron Technology

MT29F2G08ABAEAWP-ITX:E by Micron Technology

Micron Technology's MT29F2G08ABAEAWP-ITX:E is a 256MX8 SLC NAND flash memory with 2147483648 bit density. Operating at 3.3V, it has an industrial temperature grade of -40 to 85 °C. Suitable for parallel applications due to its CMOS technology and 0.5mm terminal pitch.

Median Price

$5.993

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 37 parts In-Stock

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$5.993

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$4.802

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37

$5.993

$4.802

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Distributors (In-Stock)

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Nova Conductors

Japan . 550 parts In-Stock

1+ parts

$5.573

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550

$5.573

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Digiode

USA . 2,040 parts In-Stock

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$5.693

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$5.693

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Chip Stock

USA . 12,900 parts In-Stock

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Component Sense

UK . 8,733 parts In-Stock

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Vyrian

USA . 6,990 parts In-Stock

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6,990

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Goldney Electronics S.L.

Spain . 407 parts In-Stock

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Sensible Micro Corp

USA . 154 parts In-Stock

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Cyclops Electronics Ltd

UK . 154 parts In-Stock

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ComSIT Distribution GmbH

Germany . 116 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 481 parts In-Stock

1+ parts

$4.090

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481

$4.090

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Semicontronic

India . 37 parts In-Stock

1+ parts

$5.090

100+ parts

$4.963

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$4.937

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37

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$4.937

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Corphita

USA . 1,427 parts In-Stock

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$5.393

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Continental Prestige Electronics

USA . 5,370 parts In-Stock

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$5.573

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$5.461

5,370

$5.573

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$5.461

Aztec Data Supply Inc.

USA . 1,513 parts In-Stock

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$5.810

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1,513

$5.810

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AZTECH Wire

Italy . 544 parts In-Stock

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$9.888

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S.R.D Solutions

India . 33,000 parts In-Stock

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RC Electronics

USA . 9,978 parts In-Stock

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$4.280

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$4.040

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$3.960

9,978

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$4.280

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$3.960

A-Z Elektronik GmbH

Germany . 6,035 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Perfect Parts

USA . 2,996 parts In-Stock

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Argo Parts USA

USA . 2,403 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$5.461

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$5.294

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$5.183

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$5.294

$5.183

Futuretech Components

Singapore . 800 parts In-Stock

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Microchip USA

USA . 112 parts In-Stock

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Kepictronics

USA . 73 parts In-Stock

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Overview

Upgrade your devices with the high-quality MT29F2G08ABAEAWP-ITX:E Flash Memory from Micron Technology. Designed with precision and reliability, this product offers seamless performance in various applications. With a nominal supply voltage of 3.3V and an industrial temperature grade, this flash memory ensures optimal functionality even in challenging environments. Experience faster data storage and retrieval with the parallel organization and SLC NAND type technology. Trust Micron Technology to deliver top-notch products that exceed expectations. Elevate your devices with the MT29F2G08ABAEAWP-ITX:E Flash Memory today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide durability and protection for the flash memory, ensuring it can withstand various environmental conditions.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V allows for efficient power usage while maintaining optimal performance.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this flash memory can be used in a wide range of industrial applications without overheating.

Organization: 256MX8

The 256MX8 organization provides a high memory capacity and efficient data storage structure for versatile use cases.

Type: SLC NAND TYPE

Being of Single-Level Cell (SLC) NAND type, this flash memory offers fast read and write speeds, high endurance, and reliability for critical data storage needs.

Memory Density: 2147483648 bit

With a high memory density of 2147483648 bits, this flash memory can store a large amount of data in a compact space.

Technical Specifications

Flash Memory MT29F2G08ABAEAWP-ITX:E attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

2147483648 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

48

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

2.7

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

SLC NAND TYPE

Width:

12 mm

Trade Compliance

MT29F2G08ABAEAWP-ITX:E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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