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SST26WF016BA-104I/SN

Microchip Technology

SST26WF016BA-104I/SN by Microchip Technology

SST26WF016BA-104I/SN by Microchip: 16MX1 NOR Flash Memory, 104 MHz clock frequency, SPI serial bus type. Ideal for industrial applications requiring high endurance and 100000 write/erase cycles.

Median Price

$1.760

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 650 parts In-Stock

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$1.760

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650

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Chip Stock

USA . 43,500 parts In-Stock

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43,500

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Vyrian

USA . 6,013 parts In-Stock

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6,013

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 6,265 parts In-Stock

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$1.760

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$1.725

6,265

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$1.725

Argo Parts USA

USA . 3,089 parts In-Stock

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$1.760

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Aztec Data Supply Inc.

USA . 3,661 parts In-Stock

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$3.120

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$3.120

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Corohmni

South Africa . 66 parts In-Stock

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$3.282

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66

$3.282

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AZTECH Wire

Italy . 752 parts In-Stock

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$7.119

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752

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Microchip USA

USA . 2,803 parts In-Stock

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$10.720

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Ampacity Inc.

Singapore . 1,266 parts In-Stock

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$13.000

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Lixinc

USA . 16,324 parts In-Stock

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Marpe Global Electronics

Taiwan . 3,141 parts In-Stock

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QualityLine Systems

Poland . 3,141 parts In-Stock

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XL Components Corporation

Australia . 3,141 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Overview

Experience the remarkable performance and reliability of the Microchip Technology SST26WF016BA-104I/SN Flash Memory. With a focus on quality and innovation, Microchip Technology is a leading manufacturer in the industry. This Flash Memory offers versatile applications and features, from hardware to software write protection, ensuring your data is always secure. Benefit from its high endurance of 100,000 Write/Erase cycles and fast operation with a maximum clock frequency of 104 MHz. Trust Microchip Technology for cutting-edge technology that delivers exceptional value and efficiency for all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of PLASTIC/EPOXY for the package body material makes the product lightweight and durable, ideal for portable and rugged applications.

Operating Mode: SYNCHRONOUS

The SYNCHRONOUS operating mode allows for faster data transfer and better coordination between different components, enhancing overall performance.

Nominal Supply Voltage / Vsup (V): 1.8

The low 1.8V supply voltage helps in reducing power consumption, making the product energy-efficient and suitable for battery-powered devices.

Temperature Grade: INDUSTRIAL

The INDUSTRIAL temperature grade ensures reliable operation in harsh environments with varying temperature conditions, making it suitable for industrial applications.

Endurance: 100000 Write/Erase Cycles

The high endurance of 100,000 write/erase cycles ensures longevity and reliability, making the product a durable storage solution for frequent data read/write operations.

Technical Specifications

Flash Memory SST26WF016BA-104I/SN attributes and parameters. Explore more Flash Memory devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

104 MHz

Minimum Data Retention Time:

100

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

1

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX1

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.23

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

1.8

Screening Level:

TS 16949

Maximum Seated Height:

1.75 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000005 Amp

Maximum Supply Current:

25 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Type:

NOR TYPE

Width:

3.9 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

SST26WF016BA-104I/SN Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.1.A

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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