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PC28F512P33EFA

Micron Technology

PC28F512P33EFA by Micron Technology

Micron Technology's PC28F512P33EFA is a 32MX16 Flash Memory with 33554432 words. Operating at 3V, it offers a memory density of 536870912 bits and operates in industrial temperature grade. With a parallel interface and synchronous mode, it is ideal for applications requiring high-speed data storage and retrieval.

Median Price

$11.931

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 86 parts In-Stock

1+ parts

$8.361

100+ parts

-

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10k+ parts

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86

$8.361

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Flip Electronics

USA . 2,689 parts In-Stock

1+ parts

$15.500

100+ parts

-

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2,689

$15.500

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Dynamic Solutions

Germany . 4,000 parts In-Stock

1+ parts

-

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4,000

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Chip Stock

USA . 3,342 parts In-Stock

1+ parts

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3,342

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Vyrian

USA . 2,013 parts In-Stock

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2,013

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Digiode

USA . 1,411 parts In-Stock

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1,411

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Bristol Electronics

USA . 32 parts In-Stock

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32

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Atlantic Semiconductor

USA . 32 parts In-Stock

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32

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Tectiva GmbH

Germany . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 5,273 parts In-Stock

1+ parts

$2.305

100+ parts

-

1k+ parts

$2.213

10k+ parts

$2.213

5,273

$2.305

-

$2.213

$2.213

Ampacity Inc.

Singapore . 1,541 parts In-Stock

1+ parts

$6.000

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1,541

$6.000

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Netroflash

USA . 100 parts In-Stock

1+ parts

$8.361

100+ parts

-

1k+ parts

$7.943

10k+ parts

$7.776

100

$8.361

-

$7.943

$7.776

AZTECH Wire

Italy . 283 parts In-Stock

1+ parts

$14.751

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283

$14.751

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A-Z Elektronik GmbH

Germany . 5,298 parts In-Stock

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RC Electronics

USA . 3,420 parts In-Stock

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Perfect Parts

USA . 2,839 parts In-Stock

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Kepictronics

USA . 1,800 parts In-Stock

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1,800

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Corphita

USA . 1,509 parts In-Stock

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1,509

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Futuretech Components

Singapore . 482 parts In-Stock

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482

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Microchip USA

USA . 138 parts In-Stock

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138

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Overview

Unlock the power of reliable and high-quality Flash Memory with the Micron Technology PC28F512P33EFA. Manufactured by industry leader Micron Technology, this product offers exceptional value and benefits for a wide range of applications. With a nominal supply voltage of 3V and a maximum operating temperature of 85°C, this Flash Memory is perfect for industrial use. Its compact package style and thin profile make it easy to integrate into various devices seamlessly. Trust Micron Technology to deliver top-notch performance and reliability with the PC28F512P33EFA.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the flash memory, ensuring a longer lifespan.

Operating Mode: SYNCHRONOUS

Allows for faster and more efficient data transfer, making it suitable for high-performance applications.

Nominal Supply Voltage / Vsup (V): 3

Compatible with a standard supply voltage, making it easy to integrate into existing systems.

Maximum Operating Temperature: 85 °C

Can withstand higher temperatures, making it suitable for industrial applications where heat may be a concern.

Memory Density: 536870912 bit

High memory density allows for storing large amounts of data efficiently.

Maximum Access Time: 95 ns

Low access time ensures quick retrieval of data, improving system performance.

Technical Specifications

Flash Memory PC28F512P33EFA attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

95 ns

Additional Features:

IT ALSO OPERATES IN ASYNCHRONOUS MODE

JESD-30 Code:

R-PBGA-B64

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

64

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

PC28F512P33EFA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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