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CAT28F512G12

Onsemi

CAT28F512G12 by Onsemi

CAT28F512G12 by Onsemi is a 64Kx8 NOR flash memory chip with 524288-bit density. Operating at 5V, it offers 100000 write/erase cycles and has a max access time of 120ns. Ideal for commercial applications requiring high-speed parallel memory with a command user interface.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,147 parts In-Stock

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Vyrian

USA . 679 parts In-Stock

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Nova Conductors

Japan . 534 parts In-Stock

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534

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Contempo Components LLC

USA . 6 parts In-Stock

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AZTECH Wire

Italy . 1,282 parts In-Stock

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$6.412

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Ampacity Inc.

Singapore . 1,108 parts In-Stock

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$13.000

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SupplyDigital Components

Austria . 6,534 parts In-Stock

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Problanco Electronics

Mexico . 5,788 parts In-Stock

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TANS Electronics

Latvia . 4,109 parts In-Stock

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Corphita

USA . 1,574 parts In-Stock

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Bastille Electronics

Australia . 1,550 parts In-Stock

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Microchip USA

USA . 398 parts In-Stock

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Corohmni

South Africa . 349 parts In-Stock

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Kulean Microsystems

USA . 330 parts In-Stock

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UHIMA Technologies

Türkiye . 12 parts In-Stock

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Overview

Unlock the power of reliable and high-quality data storage with the CAT28F512G12 Flash Memory by Onsemi. With a strong reputation for excellence in manufacturing, Onsemi brings you a product that guarantees seamless performance and durability. Ideal for a wide range of applications, this flash memory offers customers the value of efficient data storage, fast access times, and endurance for up to 100,000 write/erase cycles. Trust Onsemi to provide you with a superior product that meets your data storage needs with precision and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package light-weight and durable, ideal for portable devices.

Surface Mount: YES

Surface mount technology allows for easy and efficient integration onto circuit boards.

Organisation: 64KX8

Organized as 64K words by 8 bits, providing a good balance of capacity and access speed.

Minimum Operating Temperature: 0 °C

Can operate in a wide range of temperatures, making it suitable for various environments.

Programming Voltage (V): 12

The higher programming voltage allows for faster write and erase cycles, improving performance.

Endurance: 100000 Write/Erase Cycles

With a high endurance level, this flash memory can withstand frequent read/write operations over a long period.

Technical Specifications

Flash Memory CAT28F512G12 attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Access Time:

120 ns

Command User Interface:

YES

Data Polling:

NO

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Length:

13.97 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

32

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Programming Voltage (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

3.55 mm

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

40

Toggle Bit:

NO

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

CAT28F512G12 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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