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CAT28F001G-12BT

Onsemi

CAT28F001G-12BT by Onsemi

CAT28F001G-12BT by Onsemi is a 128Kx8 NOR flash memory chip with 100,000 write/erase cycles. Operating at 5V, it offers fast access time of 120ns and supports asynchronous mode. Ideal for commercial applications requiring high endurance and parallel interface.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 911 parts In-Stock

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Nova Conductors

Japan . 800 parts In-Stock

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800

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Vyrian

USA . 432 parts In-Stock

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Ampacity Inc.

Singapore . 449 parts In-Stock

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$9.000

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449

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AZTECH Wire

Italy . 432 parts In-Stock

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$17.941

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SupplyDigital Components

Austria . 5,690 parts In-Stock

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Problanco Electronics

Mexico . 4,294 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Kulean Microsystems

USA . 2,988 parts In-Stock

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TANS Electronics

Latvia . 2,463 parts In-Stock

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Argo Parts USA

USA . 1,337 parts In-Stock

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Corphita

USA . 1,305 parts In-Stock

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UHIMA Technologies

Türkiye . 942 parts In-Stock

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Continental Prestige Electronics

USA . 920 parts In-Stock

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Microchip USA

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Corohmni

South Africa . 179 parts In-Stock

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Bastille Electronics

Australia . 76 parts In-Stock

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Overview

Unlock the power of reliable and high-quality data storage with the CAT28F001G-12BT by Onsemi. As a leading manufacturer in the industry, Onsemi delivers exceptional flash memory solutions that provide seamless operation and optimal performance. Whether used in automotive, industrial, or consumer electronics applications, this product offers unmatched value and benefits to customers. With its advanced technology and endurance of 100,000 write/erase cycles, the CAT28F001G-12BT ensures data integrity and security while maximizing efficiency. Upgrade your systems today with this top-of-the-line memory IC and experience the difference Onsemi brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection to the flash memory chip.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent actions to occur simultaneously, enhancing performance.

Nominal Supply Voltage / Vsup: 5V

Operating at a nominal voltage of 5V ensures compatibility and reliability in most applications.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this flash memory chip can function effectively even in high-temperature environments.

Memory IC Type: FLASH

Being a flash memory chip, it offers non-volatile storage capabilities for retaining data even when power is removed.

Technical Specifications

Flash Memory CAT28F001G-12BT attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Access Time:

120 ns

Additional Features:

BOTTOM BOOT BLOCK

Boot Block:

BOTTOM

Command User Interface:

YES

Data Polling:

NO

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Length:

13.97 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Sectors/Size:

1,2,1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Programming Voltage (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

3.55 mm

Sector Size (Words):

8K,4K,112K

Maximum Standby Current:

.000001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

NO

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

CAT28F001G-12BT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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