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CAT28F001G-90B

Onsemi

CAT28F001G-90B by Onsemi

CAT28F001G-90B by Onsemi is a 128KX8 NOR flash memory chip with 131072 words. Operating at 5V, it offers 100000 Write/Erase Cycles and has an access time of 90ns. Ideal for commercial applications requiring fast, reliable non-volatile memory storage in a compact CHIP CARRIER package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,532 parts In-Stock

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1,532

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Vyrian

USA . 121 parts In-Stock

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121

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Distributors (Availability)

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Native Components

USA . 603 parts In-Stock

1+ parts

$254.918

100+ parts

$249.820

1k+ parts

$247.271

10k+ parts

$244.722

603

$254.918

$249.820

$247.271

$244.722

Northwest PG Solutions

USA . 1,053 parts In-Stock

1+ parts

$280.410

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$280.410

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Kulean Microsystems

USA . 6,581 parts In-Stock

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SupplyDigital Components

Austria . 5,378 parts In-Stock

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Problanco Electronics

Mexico . 5,196 parts In-Stock

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5,196

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TANS Electronics

Latvia . 5,024 parts In-Stock

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Corphita

USA . 528 parts In-Stock

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528

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Microchip USA

USA . 325 parts In-Stock

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325

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UHIMA Technologies

Türkiye . 319 parts In-Stock

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319

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Corohmni

South Africa . 260 parts In-Stock

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Robosynatics

Brazil . 100 parts In-Stock

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Lucentia Tech

USA . 100 parts In-Stock

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$3.920

1k+ parts

$3.630

10k+ parts

$3.630

100

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$3.920

$3.630

$3.630

Overview

Experience lightning-fast data storage and retrieval with the CAT28F001G-90B Flash Memory by Onsemi. Boasting top-notch quality and reliability, this chip carrier package offers seamless integration into various applications. Whether you're in need of high-speed data transfers or reliable program execution, this NOR type memory device has got you covered. With a commercial temperature grade and 100,000 write/erase cycles endurance, the CAT28F001G-90B ensures long-lasting performance and peace of mind. Upgrade your system today with this cutting-edge memory solution from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material that provides protection to the internal components of the flash memory.

Operating Mode: ASYNCHRONOUS

Allows for independent and simultaneous read and write operations, enhancing overall performance and efficiency.

Nominal Supply Voltage / Vsup (V): 5

Compatible with standard power supplies, making it easy to integrate into various systems.

Memory Density: 1048576 bit

High memory density allows for storing a large amount of data in a compact form factor.

Endurance: 100000 Write/Erase Cycles

Long lifespan with high endurance ensures reliable and consistent data storage and retrieval over time.

Maximum Access Time: 90 ns

Fast access time ensures quick data retrieval for improved performance in demanding applications.

Technical Specifications

Flash Memory CAT28F001G-90B attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Access Time:

90 ns

Additional Features:

BOTTOM BOOT BLOCK

Boot Block:

BOTTOM

Command User Interface:

YES

Data Polling:

NO

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Length:

13.97 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Sectors/Size:

1,2,1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Programming Voltage (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

3.55 mm

Sector Size (Words):

8K,4K,112K

Maximum Standby Current:

.000001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

NO

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

CAT28F001G-90B Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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