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CAT28F001GA-12T

Onsemi

CAT28F001GA-12T by Onsemi

CAT28F001GA-12T by Onsemi is a 128Kx8 NOR flash memory chip with 100000 Write/Erase Cycles endurance. Operating at 5V, it offers fast access time of 120ns and supports asynchronous mode. Ideal for industrial applications requiring reliable non-volatile memory storage in compact form factor.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,000 parts In-Stock

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2,000

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Vyrian

USA . 204 parts In-Stock

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204

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Rebound Electronics

UK . 30 parts In-Stock

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30

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Distributors (Availability)

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Native Components

USA . 938 parts In-Stock

1+ parts

$0.343

100+ parts

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$0.329

938

$0.343

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$0.329

Northwest PG Solutions

USA . 2,301 parts In-Stock

1+ parts

$0.377

100+ parts

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$0.332

2,301

$0.377

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$0.332

TANS Electronics

Latvia . 8,300 parts In-Stock

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8,300

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Kulean Microsystems

USA . 6,643 parts In-Stock

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6,643

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Corphita

USA . 2,348 parts In-Stock

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2,348

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Problanco Electronics

Mexico . 2,257 parts In-Stock

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2,257

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Corohmni

South Africa . 464 parts In-Stock

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464

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UHIMA Technologies

Türkiye . 219 parts In-Stock

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SupplyDigital Components

Austria . 36 parts In-Stock

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Overview

Experience the power of reliable data storage with the CAT28F001GA-12T by Onsemi. Crafted with precision and quality, this flash memory device offers exceptional performance in a compact chip carrier package. Perfect for industrial applications, this NOR type memory provides fast access times and endurance for up to 100,000 write/erase cycles. Trust in Onsemi's expertise and innovation to elevate your projects to new heights with the CAT28F001GA-12T. Unlock the potential of seamless data management today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product easy to handle and resistant to wear and tear.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent communication with the memory without the need for synchronization, making data access more efficient.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V voltage ensures compatibility with a wide range of systems and devices.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature, this product can endure harsh environmental conditions without compromising performance.

Endurance: 100000 Write/Erase Cycles

The high endurance rating ensures that the memory can handle frequent read/write operations, increasing its reliability and longevity.

Technical Specifications

Flash Memory CAT28F001GA-12T attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Access Time:

120 ns

Additional Features:

TOP BOOT BLOCK

Boot Block:

TOP

Command User Interface:

YES

Data Polling:

NO

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Length:

13.97 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

1,2,1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

3.55 mm

Sector Size (Words):

8K,4K,112K

Maximum Standby Current:

.000001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin (Sn)

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

NO

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

CAT28F001GA-12T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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