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CAT28F001G-90T

Onsemi

CAT28F001G-90T by Onsemi

CAT28F001G-90T by Onsemi is a 128Kx8 NOR flash memory chip with 100,000 write/erase cycles. Operating at 5V, it has an access time of 90ns and supports asynchronous mode. Ideal for commercial applications requiring fast data storage and retrieval in compact devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

USA . 285 parts In-Stock

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Digiode

USA . 249 parts In-Stock

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Native Components

USA . 203 parts In-Stock

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$11.809

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Northwest PG Solutions

USA . 100 parts In-Stock

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$12.990

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$11.691

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SupplyDigital Components

Austria . 6,198 parts In-Stock

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TANS Electronics

Latvia . 2,969 parts In-Stock

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Kulean Microsystems

USA . 2,734 parts In-Stock

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Corphita

USA . 1,611 parts In-Stock

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Problanco Electronics

Mexico . 826 parts In-Stock

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Corohmni

South Africa . 484 parts In-Stock

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UHIMA Technologies

Türkiye . 185 parts In-Stock

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Overview

Innovate your technology with the CAT28F001G-90T by Onsemi, a cutting-edge Flash Memory solution that offers unparalleled quality and reliability. As a leading manufacturer in the industry, Onsemi ensures top-notch performance and durability in all their products. Ideal for a wide range of applications, this Flash Memory device provides fast access times and high endurance, making it a valuable asset for any tech enthusiast or professional. Upgrade your systems today with the CAT28F001G-90T and experience the difference in efficiency and speed!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is commonly used for electronic components as it is lightweight, durable, and cost-effective.

Operating Mode: ASYNCHRONOUS

Allows for independent operation of each memory cell, leading to faster access times and improved efficiency.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage which makes it compatible with most systems and ensures reliable performance.

Organization: 128KX8

Offers a high memory capacity of 128 kilobits organized in 8-bit words, suitable for storing a large amount of data.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, making the product energy-efficient and reliable.

Endurance: 100000 Write/Erase Cycles

High endurance ensures durability and longevity of the product, allowing for frequent read and write operations without degradation.

Maximum Access Time: 90 ns

Fast access time enables quick data retrieval and improved system performance, making it ideal for high-speed applications.

Technical Specifications

Flash Memory CAT28F001G-90T attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Access Time:

90 ns

Additional Features:

TOP BOOT BLOCK

Boot Block:

TOP

Command User Interface:

YES

Data Polling:

NO

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Length:

13.97 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

1,2,1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Programming Voltage (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

3.55 mm

Sector Size (Words):

8K,4K,112K

Maximum Standby Current:

.000001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

NO

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

CAT28F001G-90T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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