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CAT28F001GA-12BT

Onsemi

CAT28F001GA-12BT by Onsemi

CAT28F001GA-12BT by Onsemi is a 128Kx8 NOR Flash Memory with 100000 Write/Erase Cycles. Operating at -40 to 105 °C, it has a programming voltage of 12V and parallel interface. Ideal for industrial applications requiring fast access time and high endurance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

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Digiode

USA . 328 parts In-Stock

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Vyrian

USA . 88 parts In-Stock

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Native Components

USA . 658 parts In-Stock

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$1.314

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658

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Northwest PG Solutions

USA . 2,165 parts In-Stock

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$1.446

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Problanco Electronics

Mexico . 5,611 parts In-Stock

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SupplyDigital Components

Austria . 5,151 parts In-Stock

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TANS Electronics

Latvia . 4,642 parts In-Stock

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Corphita

USA . 2,084 parts In-Stock

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Kulean Microsystems

USA . 1,780 parts In-Stock

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1,780

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UHIMA Technologies

Türkiye . 929 parts In-Stock

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Corohmni

South Africa . 218 parts In-Stock

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Overview

Unlock the power of reliable data storage with the CAT28F001GA-12BT by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and performance in their Flash Memory products. Ideal for industrial applications, this product offers seamless operation with its asynchronous mode and industrial temperature grade. With 128Kx8 organization and 131072 words, customers can count on fast access times and high endurance for up to 100,000 write/erase cycles. Trust Onsemi for exceptional value and unparalleled reliability in data storage solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the product lightweight and durable, ideal for portable devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster data transfer speeds and efficient performance.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with a wide range of systems and power sources.

No. of Terminals: 32

Having 32 terminals provides ample connectivity options and flexibility in system integration.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature, the product can withstand harsh environmental conditions and extended usage.

Organization: 128KX8

The organization of 128KX8 allows for efficient data storage and retrieval, enhancing overall system performance.

Endurance: 100000 Write/Erase Cycles

The high endurance of 100000 write/erase cycles ensures long-lasting reliability and durability for the memory.

Technical Specifications

Flash Memory CAT28F001GA-12BT attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Access Time:

120 ns

Additional Features:

BOTTOM BOOT BLOCK

Boot Block:

BOTTOM

Command User Interface:

YES

Data Polling:

NO

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Length:

13.97 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

1,2,1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

3.55 mm

Sector Size (Words):

8K,4K,112K

Maximum Standby Current:

.000001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin (Sn)

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

NO

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

CAT28F001GA-12BT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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