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CAT28F001LI-12T

Onsemi

CAT28F001LI-12T by Onsemi

CAT28F001LI-12T by Onsemi is a 128KX8 NOR Flash Memory with 100000 Write/Erase Cycles. Operating at 5V, it has an access time of 120ns and endurance of 0.000001 Amp standby current. Ideal for industrial applications requiring high-speed parallel memory with 131072 words capacity.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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J2 Sourcing AB

Sweden . 2,640 parts In-Stock

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Digiode

USA . 2,217 parts In-Stock

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Vyrian

USA . 882 parts In-Stock

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Nova Conductors

Japan . 93 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,056 parts In-Stock

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$3.132

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1,056

$3.132

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AZTECH Wire

Italy . 882 parts In-Stock

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$7.209

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882

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Ampacity Inc.

Singapore . 634 parts In-Stock

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$18.000

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634

$18.000

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Semicontronic

India . 207 parts In-Stock

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$27.000

100+ parts

$26.325

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$26.190

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207

$27.000

$26.325

$26.190

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Kulean Microsystems

USA . 7,702 parts In-Stock

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Continental Prestige Electronics

USA . 4,518 parts In-Stock

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Argo Parts USA

USA . 2,418 parts In-Stock

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Corphita

USA . 2,115 parts In-Stock

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Problanco Electronics

Mexico . 1,282 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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SupplyDigital Components

Austria . 944 parts In-Stock

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UHIMA Technologies

Türkiye . 478 parts In-Stock

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Corohmni

South Africa . 465 parts In-Stock

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TANS Electronics

Latvia . 388 parts In-Stock

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Microchip USA

USA . 121 parts In-Stock

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Overview

Unlock the power of reliable and high-quality flash memory with the CAT28F001LI-12T by Onsemi. Designed to meet the demands of industrial applications, this flash memory device offers unparalleled performance and endurance with 100,000 write/erase cycles. With a wide operating temperature range and a robust package body material, the CAT28F001LI-12T ensures optimal functionality in any environment. Trust in Onsemi's expertise in memory IC technology and choose the CAT28F001LI-12T for seamless integration and enhanced performance in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the flash memory easy to handle and long-lasting.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster data transfer speeds and efficient performance.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard voltage level of 5V, ensuring compatibility with a wide range of devices.

Organization: 128KX8

Offers a large memory capacity organized in a convenient 128K x 8 configuration for efficient data storage.

Technology: CMOS

Utilizes CMOS technology for low power consumption and reliable performance.

Endurance: 100000 Write/Erase Cycles

Can withstand up to 100,000 write/erase cycles, ensuring data reliability and longevity.

Maximum Access Time: 120 ns

Provides fast access times for quick data retrieval and efficient operation.

Technical Specifications

Flash Memory CAT28F001LI-12T attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Access Time:

120 ns

Additional Features:

TOP BOOT BLOCK

Boot Block:

TOP

Command User Interface:

YES

Data Polling:

NO

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDIP-T32

JESD-609 Code:

e3

Length:

42.03 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

1,2,1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Programming Voltage (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sector Size (Words):

8K,4K,112K

Maximum Standby Current:

.000001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Toggle Bit:

NO

Type:

NOR TYPE

Width:

15.24 mm

Trade Compliance

CAT28F001LI-12T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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