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CAT28F001G-12T

Onsemi

CAT28F001G-12T by Onsemi

CAT28F001G-12T by Onsemi is a 128Kx8 NOR flash memory chip with 100000 Write/Erase Cycles endurance. Operating at 5V, it has a max access time of 120ns and offers parallel interface for fast data transfer. Ideal for applications requiring high-speed non-volatile memory storage in commercial temperature environments.

Median Price

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Lifecycle Status

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4

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1k+

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Chip Stock

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Rebound Electronics

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Digiode

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Corohmni

South Africa . 464 parts In-Stock

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$2.980

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Advanced Electronics

New Zealand . 600 parts In-Stock

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$5.007

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$4.556

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$4.106

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Component Stockers USA

USA . 230 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

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Kulean Microsystems

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A-Z Elektronik GmbH

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Metaverse IC Inc.

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Alle Elektronik GmbH

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Microchip USA

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SupplyDigital Components

Austria . 2,694 parts In-Stock

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Corphita

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UHIMA Technologies

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Overview

Enhance your device's performance with the CAT28F001G-12T by Onsemi, a top-quality Flash Memory solution that offers reliable data storage for a wide range of applications. With Onsemi's reputation for excellence in manufacturing, you can trust in the durability and efficiency of this product. Whether you're looking to upgrade your system or enhance its capabilities, the CAT28F001G-12T provides value, benefits, and advantages that will exceed your expectations. Explore the possibilities and elevate your device's functionality with this innovative Flash Memory solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material ensures the flash memory is resistant to physical damage, extending its lifespan and reliability.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent and parallel access to data, enhancing performance and efficiency.

Nominal Supply Voltage / Vsup (V): 5

Standard 5V supply voltage ensures compatibility with a wide range of systems and devices.

Organization: 128KX8

Organized as 128K words of 8 bits each, providing a sufficient memory capacity for storing data efficiently.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the flash memory energy-efficient and reliable.

Endurance: 100000 Write/Erase Cycles

High endurance rating allows for frequent read and write operations without compromising the longevity of the flash memory.

Technical Specifications

Flash Memory CAT28F001G-12T attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Access Time:

120 ns

Additional Features:

TOP BOOT BLOCK

Boot Block:

TOP

Command User Interface:

YES

Data Polling:

NO

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Length:

13.97 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Sectors/Size:

1,2,1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Programming Voltage (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

3.55 mm

Sector Size (Words):

8K,4K,112K

Maximum Standby Current:

.000001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

NO

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

CAT28F001G-12T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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