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CAT28F001G-12TE13

Onsemi

CAT28F001G-12TE13 by Onsemi

CAT28F001G-12TE13 by Onsemi is a 128KX8 NOR flash memory chip with 1048576-bit density. Operating at 5V, it has a programming voltage of 12V and max access time of 120ns. Ideal for commercial applications requiring fast, asynchronous memory with parallel interface.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 851 parts In-Stock

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Vyrian

USA . 204 parts In-Stock

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Native Components

USA . 795 parts In-Stock

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$0.040

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$0.039

795

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$0.039

TANS Electronics

Latvia . 7,877 parts In-Stock

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Problanco Electronics

Mexico . 6,171 parts In-Stock

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SupplyDigital Components

Austria . 4,803 parts In-Stock

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Kulean Microsystems

USA . 2,313 parts In-Stock

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Corphita

USA . 2,133 parts In-Stock

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Northwest PG Solutions

USA . 1,859 parts In-Stock

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UHIMA Technologies

Türkiye . 872 parts In-Stock

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Corohmni

South Africa . 386 parts In-Stock

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Overview

Unlock the power of reliable and high-quality Flash Memory with the CAT28F001G-12TE13 by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch performance and durability in all their products. Ideal for a wide range of applications, this Flash Memory offers seamless operation and fast access times, making it perfect for use in various electronic devices. Experience the value and benefits of this product, and elevate your projects with the superior quality and advantages that only Onsemi can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material for protecting the flash memory chip from external damage.

Surface Mount: YES

Easy to solder onto circuit boards for integration into electronic devices.

Operating Mode: ASYNCHRONOUS

Allows for independent operations which can enhance performance and efficiency.

Nominal Supply Voltage / Vsup (V): 5

Compatible with most standard power supplies, making it versatile in different applications.

Maximum Operating Temperature: 70 °C

Can withstand high temperatures, suitable for use in various environments.

Memory IC Type: FLASH

Flash memory is non-volatile, allowing data to be retained even when power is removed.

Technical Specifications

Flash Memory CAT28F001G-12TE13 attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Access Time:

120 ns

Additional Features:

DEEP POWER-DOWN

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Length:

13.97 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Programming Voltage (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

3.55 mm

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

CAT28F001G-12TE13 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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