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CAT28F001L-90B

Onsemi

CAT28F001L-90B by Onsemi

CAT28F001L-90B by Onsemi is a 128Kx8 NOR flash memory with 100000 write/erase cycles. Operating at 5V, it offers fast access time of 90ns and supports asynchronous mode. Ideal for commercial applications requiring reliable non-volatile memory with parallel interface.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,454 parts In-Stock

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2,454

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Connector Distribution Corp

USA . 240 parts In-Stock

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240

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Right Parts Inc.

USA . 205 parts In-Stock

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205

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Nova Conductors

Japan . 200 parts In-Stock

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200

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Vyrian

USA . 191 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 3,556 parts In-Stock

1+ parts

$5.002

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3,556

$5.002

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AZTECH Wire

Italy . 191 parts In-Stock

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$7.447

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191

$7.447

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Ampacity Inc.

Singapore . 1,545 parts In-Stock

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$19.000

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1,545

$19.000

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Problanco Electronics

Mexico . 6,904 parts In-Stock

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Kulean Microsystems

USA . 6,539 parts In-Stock

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Argo Parts USA

USA . 4,012 parts In-Stock

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Corphita

USA . 2,400 parts In-Stock

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SupplyDigital Components

Austria . 2,376 parts In-Stock

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Continental Prestige Electronics

USA . 996 parts In-Stock

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996

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Robosynatics

Brazil . 350 parts In-Stock

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350

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Lucentia Tech

USA . 350 parts In-Stock

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$2.364

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$2.189

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$2.189

350

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$2.364

$2.189

$2.189

UHIMA Technologies

Türkiye . 255 parts In-Stock

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Corohmni

South Africa . 210 parts In-Stock

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210

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TANS Electronics

Latvia . 191 parts In-Stock

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191

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Microchip USA

USA . 144 parts In-Stock

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144

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Enhance your electronic devices with the CAT28F001L-90B Flash Memory by Onsemi, a high-quality product that guarantees reliability and performance. This innovative memory solution offers customers seamless operation and versatility, making it ideal for a wide range of applications in the technology industry. Onsemi's dedication to excellence ensures that you receive a top-tier product that will elevate your projects to the next level. Choose the CAT28F001L-90B for superior quality, value, and efficiency in your designs.

Feature Benefit Bullets

Package Body Material - PLASTIC/EPOXY

This material provides durability and protection for the flash memory chip, ensuring longevity and reliability.

Operating Mode - ASYNCHRONOUS

Asynchronous operation allows for independent, non-blocking data transfers, increasing efficiency and speed.

Nominal Supply Voltage / Vsup (V) - 5

A standard and stable supply voltage of 5V ensures consistent performance and compatibility with various systems.

No. of Terminals - 32

Having 32 terminals offers flexibility in connectivity and enables seamless integration into different circuit designs.

Temperature Grade - COMMERCIAL

Designed for commercial use, this flash memory chip meets industry standards and is suitable for a wide range of applications.

Memory Density - 1048576 bit

With a high memory density, this chip can store a large amount of data efficiently, making it ideal for storage-intensive tasks.

Technical Specifications

Flash Memory CAT28F001L-90B attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Access Time:

90 ns

Additional Features:

BOTTOM BOOT BLOCK

Boot Block:

BOTTOM

Command User Interface:

YES

Data Polling:

NO

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDIP-T32

JESD-609 Code:

e3

Length:

42.03 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

1,2,1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Programming Voltage (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sector Size (Words):

8K,4K,112K

Maximum Standby Current:

.000001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Toggle Bit:

NO

Type:

NOR TYPE

Width:

15.24 mm

Trade Compliance

CAT28F001L-90B Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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