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PC28F256P33BFE

Micron Technology

PC28F256P33BFE by Micron Technology

Micron Technology's PC28F256P33BFE is a 16Mx16 NOR flash memory with 3V nominal voltage. Operating in synchronous mode, it offers 16K and 64K sector sizes. Ideal for industrial applications, this thin-profile grid array package has a max operating temperature of 85°C.

Median Price

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Lifecycle Status

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13

In-Stock Inventory

1k+

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Bristol Electronics

USA . 66,340 parts In-Stock

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Chip Stock

USA . 14,500 parts In-Stock

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Vyrian

USA . 7,463 parts In-Stock

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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Digiode

USA . 1,626 parts In-Stock

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Cyclops Electronics Ltd

UK . 1,163 parts In-Stock

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Sensible Micro Corp

USA . 410 parts In-Stock

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Sternenhof Electronics

Switzerland . 200 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Touchstone Systems

USA . 90 parts In-Stock

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Greenchips

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Semi Source

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4 Star Electronics, Inc.

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Ampacity Inc.

Singapore . 1,112 parts In-Stock

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$4.000

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Component Stockers USA

USA . 141 parts In-Stock

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$9.920

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$9.420

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AZTECH Wire

Italy . 238 parts In-Stock

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$9.925

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Perfect Parts

USA . 73,643 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,109 parts In-Stock

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Sternenhof Electronics (Excess)

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Argo Parts USA

USA . 4,346 parts In-Stock

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RC Electronics

USA . 4,304 parts In-Stock

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Continental Prestige Electronics

USA . 2,995 parts In-Stock

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Microchip USA

USA . 2,697 parts In-Stock

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Futuretech Components

Singapore . 2,500 parts In-Stock

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Corphita

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S.R.D Solutions

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Kepictronics

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Benley Electronics

USA . 397 parts In-Stock

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Bastille Electronics

Australia . 97 parts In-Stock

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iodParts Technologies Inc.

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Overview

Experience unparalleled speed and reliability with the Micron Technology PC28F256P33BFE Flash Memory. As a leader in memory solutions, Micron Technology delivers cutting-edge technology that ensures optimal performance for a wide range of applications. From data storage to firmware updates, this flash memory offers seamless integration and high-speed data transfer. Upgrade your system with Micron Technology and enjoy the benefits of superior quality and unmatched efficiency. Unlock the potential of your devices with the PC28F256P33BFE Flash Memory today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the flash memory, ensuring a longer lifespan.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation onto circuit boards, saving time and effort during assembly.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise and accurate data transfer, making this flash memory ideal for high-speed applications.

Nominal Supply Voltage / Vsup (V): 3

The 3V nominal supply voltage offers efficient power consumption while maintaining reliable performance.

No. of Sectors/Size: 4,255

With a large number of sectors available, this flash memory provides ample storage capacity for data organization and management.

Technology: CMOS

CMOS technology ensures low power consumption and high noise immunity, enhancing the overall performance and reliability of the flash memory.

Maximum Standby Current: 0.00021 Amp

The extremely low standby current helps conserve power when the flash memory is not in active use, making it energy-efficient.

Technical Specifications

Flash Memory PC28F256P33BFE attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

95 ns

Additional Features:

BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B64

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

4,255

No. of Terminals:

64

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA64,8X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

2.5/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,64K

Maximum Standby Current:

.00021 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

31 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

PC28F256P33BFE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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