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PC28F640J3F75A

Micron Technology

PC28F640J3F75A by Micron Technology

Micron Technology's PC28F640J3F75A is a 64-terminal NOR flash memory with 4MX16 organization, operating at 3V. With a sector size of 128K words and max access time of 75ns, it is ideal for industrial applications requiring fast and reliable non-volatile memory storage.

Median Price

$5.102

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Avnet

USA . 2,174 parts In-Stock

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Digiode

USA . 212 parts In-Stock

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$5.102

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212

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Kruse

Germany . 64,800 parts In-Stock

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Kruse Electronics AG

Switzerland . 63,072 parts In-Stock

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ARCO, INC.

USA . 54,400 parts In-Stock

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J2 Sourcing AB

Sweden . 35,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 25,920 parts In-Stock

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Chip Stock

USA . 11,600 parts In-Stock

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Touchstone Systems

USA . 5,508 parts In-Stock

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Flip Electronics

USA . 4,000 parts In-Stock

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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Vyrian

USA . 1,999 parts In-Stock

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ComSIT Distribution GmbH

Germany . 864 parts In-Stock

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864

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ComSIT USA

USA . 864 parts In-Stock

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864

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Nova Conductors

Japan . 800 parts In-Stock

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800

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Bristol Electronics

USA . 389 parts In-Stock

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389

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 3,913 parts In-Stock

1+ parts

$3.270

100+ parts

$3.110

1k+ parts

$3.010

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3,913

$3.270

$3.110

$3.010

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Ampacity Inc.

Singapore . 414 parts In-Stock

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$4.560

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414

$4.560

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Corphita

USA . 1,789 parts In-Stock

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$4.833

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Perfect Parts

USA . 26,880 parts In-Stock

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A-Z Elektronik GmbH

Germany . 24,883 parts In-Stock

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GreenTree Electronics

Israel . 18,816 parts In-Stock

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RC Electronics

USA . 5,698 parts In-Stock

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Kepictronics

USA . 5,355 parts In-Stock

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Sternenhof Electronics (Excess)

Switzerland . 4,738 parts In-Stock

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Microchip USA

USA . 1,992 parts In-Stock

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Authorized Procurement Solutions

USA . 1,300 parts In-Stock

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Legend Electronics Inc. (Excess)

USA . 1,300 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 1,300 parts In-Stock

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Futuretech Components

Singapore . 1,091 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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ChipstoGo Electronic ltd

UK . 609 parts In-Stock

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S.R.D Solutions

India . 500 parts In-Stock

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iodParts Technologies Inc.

India . 100 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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ChipTracer

USA . 1 parts In-Stock

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1

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Overview

Elevate your digital experience with the Micron Technology PC28F640J3F75A Flash Memory. Crafted with precision and expertise, this state-of-the-art memory solution offers unparalleled reliability and performance. Ideal for a wide range of applications, this product provides seamless data storage and retrieval, ensuring smooth operations every time. Trust in Micron Technology to deliver cutting-edge technology that meets your needs and exceeds your expectations. Experience the innovation and quality that only Micron can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and resistance to environmental factors, making the product reliable for long-term use.

Surface Mount: YES

Surface mount design allows for easy and secure installation on circuit boards, saving space and simplifying assembly.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enhances flexibility and efficiency in data transfer, improving overall performance of the flash memory.

Nominal Supply Voltage: 3V

Stable 3V supply voltage ensures consistent and reliable operation of the flash memory.

Memory Density: 67,108,864 bit

High memory density allows for storage of a large amount of data in a compact form factor, making it suitable for various applications.

Maximum Access Time: 75 ns

Fast access time ensures quick retrieval of data, enhancing the overall performance of the flash memory.

Technical Specifications

Flash Memory PC28F640J3F75A attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

75 ns

Alternate Memory Width:

8

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B64

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

64

No. of Terminals:

64

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA64,8X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Page Size (words):

4/8

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

128K

Maximum Standby Current:

.00012 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

80 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

PC28F640J3F75A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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