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ASX340AT3C00XPED0-DPBR-E

Onsemi

ASX340AT3C00XPED0-DPBR-E by Onsemi

Onsemi's ASX340AT3C00XPED0-DPBR-E is a 5.6x5.6 um CMOS image sensor with 728H x 560V pixels, offering a dynamic range of 87 dB and operating at temperatures from -40 to 85 °C. It features a digital voltage output interface, operates at a max supply voltage of 1.95 V, and has a frame rate of 60 fps, making it ideal for applications requiring high-quality imaging in various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,420 parts In-Stock

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Digiode

USA . 508 parts In-Stock

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508

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Distributors (Availability)

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Native Components

USA . 220 parts In-Stock

1+ parts

$23,381.070

100+ parts

$22,913.449

1k+ parts

$22,679.638

10k+ parts

$22,445.827

220

$23,381.070

$22,913.449

$22,679.638

$22,445.827

Northwest PG Solutions

USA . 797 parts In-Stock

1+ parts

$25,719.177

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Kulean Microsystems

USA . 8,060 parts In-Stock

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8,060

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TANS Electronics

Latvia . 6,698 parts In-Stock

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Problanco Electronics

Mexico . 5,055 parts In-Stock

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SupplyDigital Components

Austria . 2,535 parts In-Stock

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Corphita

USA . 1,809 parts In-Stock

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Corohmni

South Africa . 390 parts In-Stock

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UHIMA Technologies

Türkiye . 229 parts In-Stock

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Overview

Capture every moment with the ASX340AT3C00XPED0-DPBR-E by Onsemi. As a leading manufacturer in image sensors, Onsemi delivers top-quality products that provide unparalleled clarity and precision. With applications ranging from security cameras to medical imaging, this image sensor offers unmatched value and benefits for customers seeking high-performance solutions. Elevate your projects with the ASX340AT3C00XPED0-DPBR-E and experience the difference in quality and reliability that Onsemi is known for.

Feature Benefit Bullets

Pixel Size (um): 5.6X5.6

Smaller pixel size allows for higher resolution images to be captured, making this image sensor ideal for applications requiring detailed images.

Maximum Supply Voltage: 1.95 V

Having a higher maximum supply voltage provides flexibility in power supply options and allows for efficient operation.

Master Clock: 27 MHz

A high master clock frequency of 27 MHz enables fast and synchronized data processing, essential for real-time image capture and processing.

Body Width: 7.5 inch

The compact body width of 7.5 inch makes this image sensor suitable for space-constrained applications without compromising on performance.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

Being a CMOS image sensor ensures low power consumption, high sensitivity, and fast readout speeds, making it a versatile choice for various imaging applications.

Body Height: 1 mm

The low body height of 1 mm allows for easy integration into slim devices or systems, making it a practical option for small form factor designs.

Package Shape or Style: SQUARE

The square package shape offers uniformity and ease of mounting, contributing to seamless integration into systems or devices.

Minimum Supply Voltage: 1.7 V

A low minimum supply voltage of 1.7 V ensures energy efficiency and compatibility with a wide range of power sources for enhanced versatility.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, this image sensor can withstand harsh environmental conditions, providing reliability in various applications.

Horizontal Pixel: 728

The high horizontal pixel count of 728 contributes to detailed and high-resolution image capture, making this sensor suitable for applications requiring precision.

Output Range: 0.84-1.96V

The output range of 0.84-1.96V ensures accurate and reliable digital voltage output, essential for precise image data transmission and processing.

Output Type: DIGITAL VOLTAGE

A digital voltage output type simplifies data processing and integration, enhancing the compatibility and efficiency of the image sensor in various systems.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C allows this image sensor to function effectively in freezing conditions, expanding its utility in diverse environments.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

The terminal finish of Tin/Silver/Copper provides reliable conductivity, corrosion resistance, and solderability for secure connections and long-term functionality.

Housing: PLASTIC

The plastic housing offers lightweight durability, cost-effectiveness, and ease of customization, making it a practical choice for various imaging applications.

Dynamic Range: 87 dB

An impressive dynamic range of 87 dB allows this image sensor to capture a wide range of light intensities accurately, ensuring high-quality and detailed image output.

Vertical Pixel: 560

The vertical pixel count of 560 complements the horizontal pixel count for balanced image resolution, enhancing the overall image quality and clarity.

Body Length/Diameter: 7.5 mm

The compact body length/diameter of 7.5 mm facilitates easy integration and placement in devices or systems, optimizing space utilization and design flexibility.

Optical Format (inch): 1/4

The 1/4 inch optical format provides compatibility with standard imaging equipment and lenses, simplifying the integration process and ensuring wide applicability.

Data Rate: 27 Mbps

A high data rate of 27 Mbps enables fast and efficient data transmission, essential for real-time image capture and processing applications.

Termination Type: SOLDER

The solder termination type ensures secure and reliable connections, offering durability and stability for long-term performance in various operating conditions.

Output Interface Type: 2-WIRE INTERFACE

The 2-WIRE INTERFACE output interface type simplifies connectivity and communication with external devices, enhancing the interoperability and versatility of the image sensor.

Frame Rate: 60 fps

A high frame rate of 60 fps enables smooth and real-time image capture, making this image sensor suitable for demanding applications requiring fast data processing.

Array Type: FRAME

The frame array type offers uniform image capture and data distribution, ensuring consistency and reliability in imaging performance across the sensor surface.

Mounting Feature: SURFACE MOUNT

The surface mounting feature simplifies installation and integration into PCBs or devices, providing convenience and efficiency in the manufacturing process.

Technical Specifications

Image Sensors ASX340AT3C00XPED0-DPBR-E attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Body Width:

7.5 inch

Body Height:

1 mm

Body Length/Diameter:

7.5 mm

Data Rate:

27 Mbps

Dynamic Range:

87 dB

Frame Rate:

60 fps

Horizontal Pixel:

728

Housing:

PLASTIC

JESD-609 Code:

e1

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

5.6X5.6

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

560

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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