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AR0147ATSC00XUEA0-DPBR

Onsemi

AR0147ATSC00XUEA0-DPBR by Onsemi

Onsemi's AR0147ATSC00XUEA0-DPBR is a 3x3 um CMOS image sensor with 1344H x 968V pixels, offering a dynamic range of 140 dB. Operating at -40 to 110 °C, it has a max supply voltage of 1.26 V and outputs digital voltage. Ideal for applications requiring high-resolution imaging at up to 60 fps.

Median Price

$20.010

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 2,600 parts In-Stock

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$20.010

100+ parts

$15.809

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$14.826

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$20.010

$15.809

$14.826

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Flip Electronics (Authorized)

USA . 5,149 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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$15.195

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10

$15.195

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Digiode

USA . 1,445 parts In-Stock

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$24.006

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1,445

$24.006

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Flip Electronics

USA . 7,749 parts In-Stock

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7,749

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Vyrian

USA . 3,797 parts In-Stock

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VNN

France . 3,604 parts In-Stock

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Corohmni

South Africa . 265 parts In-Stock

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$14.594

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265

$14.594

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Continental Prestige Electronics

USA . 4,089 parts In-Stock

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$15.195

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$14.891

4,089

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$14.891

Ampacity Inc.

Singapore . 3,593 parts In-Stock

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$21.480

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Semicontronic

India . 3,464 parts In-Stock

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$21.480

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$20.943

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$20.836

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3,464

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$20.943

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Corphita

USA . 227 parts In-Stock

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$22.743

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Lixinc

USA . 16,495 parts In-Stock

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SupplyDigital Components

Austria . 8,250 parts In-Stock

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TANS Electronics

Latvia . 7,327 parts In-Stock

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Argo Parts USA

USA . 4,965 parts In-Stock

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Kulean Microsystems

USA . 4,500 parts In-Stock

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Problanco Electronics

Mexico . 898 parts In-Stock

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Perfect Parts

USA . 538 parts In-Stock

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UHIMA Technologies

Türkiye . 267 parts In-Stock

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Kepictronics

USA . 245 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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$14.891

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$14.436

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$14.132

50

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$14.436

$14.132

Overview

Capture every moment in stunning clarity with the AR0147ATSC00XUEA0-DPBR image sensor by Onsemi. Known for their high-quality products, Onsemi delivers exceptional performance and reliability. This image sensor is perfect for a variety of applications, providing crisp and clear images with a wide dynamic range of 140 dB. With a compact design and easy integration, this sensor offers incredible value and benefits to customers looking for superior image quality in their products. Elevate your imaging experience with the AR0147ATSC00XUEA0-DPBR.

Feature Benefit Bullets

Pixel Size (um): 3X3

This small pixel size allows for high resolution images to be captured, making it ideal for applications requiring detailed image quality.

Maximum Supply Voltage: 1.26 V

The low maximum supply voltage helps to reduce power consumption, making this sensor energy-efficient and suitable for portable devices.

Master Clock: 50 MHz

The high master clock frequency ensures fast and efficient data processing, enabling quick image capture and transmission.

Body Width: 9 inch

The compact body width of 9mm allows for easy integration into various devices, making it a versatile option for different applications.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

This CMOS image sensor type provides high sensitivity and low noise, resulting in clear and sharp images in various lighting conditions.

Body Height: 1.55 mm

The thin body height allows for a slim and lightweight design, making this sensor suitable for small and portable devices.

Package Shape or Style: SQUARE

The square package shape provides a compact footprint, making it easy to mount and secure in tight spaces.

Minimum Supply Voltage: 1.14 V

The low minimum supply voltage ensures reliable operation even in low power scenarios, making this sensor versatile and efficient.

Maximum Operating Temperature: 110 °C

With a high maximum operating temperature, this sensor can withstand harsh environments and extended use without overheating.

Horizontal Pixel: 1344

The high horizontal pixel count allows for wide-angle and detailed image capture, making this sensor ideal for panoramic views and high-resolution imaging.

Output Type: DIGITAL VOLTAGE

The digital voltage output provides easy integration with digital systems, allowing for fast and accurate data transfer.

Minimum Operating Temperature: -40 °C

With a low minimum operating temperature, this sensor can function in extreme cold conditions, expanding its usability in various environments.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

The durable terminal finish enhances the sensor's lifespan and reliability, ensuring consistent performance over time.

Maximum Operating Current: 540 mA

The high maximum operating current enables the sensor to handle demanding tasks and data processing requirements effectively.

Dynamic Range: 140 dB

The wide dynamic range ensures accurate image capture in both bright and low-light conditions, making this sensor suitable for diverse lighting environments.

Vertical Pixel: 968

The high vertical pixel count allows for detailed image capture in the vertical axis, enhancing overall image quality and clarity.

Body Length/Diameter: 9 mm

The compact body length/diameter of 9mm allows for easy installation and integration in space-constrained devices.

Optical Format (inch): 1/4

The 1/4 inch optical format provides a good balance between size and image quality, making this sensor suitable for a wide range of applications.

Termination Type: SOLDER

The solder termination type ensures secure and reliable connections, preventing signal loss and ensuring stable data transmission.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface type simplifies connectivity and communication with external devices, making integration and control easier.

Frame Rate: 60 fps

The high frame rate of 60 fps enables smooth and fluid video capture, making this sensor ideal for capturing fast-moving subjects or events.

Array Type: FRAME

The frame array type provides a structured grid of pixels for accurate image reproduction, allowing for precise and detailed image capture.

Sensitivity (V/lx.s): 30.7 V/lx.s

The high sensitivity level allows for clear and vibrant images to be captured even in low-light conditions, ensuring quality image output.

Mounting Feature: SURFACE MOUNT

The surface mounting feature simplifies installation and integration, providing flexibility in device design and assembly.

Technical Specifications

Image Sensors AR0147ATSC00XUEA0-DPBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.55 mm

Body Length/Diameter:

9 mm

Dynamic Range:

140 dB

Frame Rate:

60 fps

Horizontal Pixel:

1344

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

540 mA

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

3X3

Sensitivity (V/lx.s):

30.7 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

968

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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