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KAF-16801-AAA-DP-AE

Onsemi

KAF-16801-AAA-DP-AE by Onsemi

The Onsemi KAF-16801-AAA-DP-AE is a square image sensor with 4096x4096 pixels, offering a pixel size of 9x9 µm and a dynamic range of 76 dB. It operates b/w -60 to 60 °C, suitable for high-resolution imaging applications requiring precise color capture and low light sensitivity. The sensor features a full-frame array design and can achieve data rates up to 10 Mbps, making it ideal for professional digital photography and scientific imaging projects.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,860 parts In-Stock

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Digiode

USA . 1,078 parts In-Stock

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Kulean Microsystems

USA . 7,068 parts In-Stock

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SupplyDigital Components

Austria . 3,188 parts In-Stock

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Problanco Electronics

Mexico . 3,034 parts In-Stock

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Corphita

USA . 2,494 parts In-Stock

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TANS Electronics

Latvia . 636 parts In-Stock

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Corohmni

South Africa . 339 parts In-Stock

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UHIMA Technologies

Türkiye . 323 parts In-Stock

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Overview

Capture every detail with the KAF-16801-AAA-DP-AE by Onsemi, a top-of-the-line image sensor that delivers unparalleled quality and precision. Manufactured by industry leader Onsemi, this CCD sensor is perfect for a wide range of applications, from professional photography to scientific imaging. With a high dynamic range and an impressive pixel size, this sensor guarantees exceptional performance in any setting. Trust Onsemi to provide you with the tools you need to bring your vision to life. Elevate your projects with the KAF-16801-AAA-DP-AE today.

Feature Benefit Bullets

Pixel Size (um) - 9X9

Smaller pixel size allows for higher resolution images to be captured, making this image sensor a good choice for applications requiring detailed images.

Maximum Supply Voltage - 17 V

Higher maximum supply voltage allows for flexibility in power supply options and compatibility with a wide range of systems.

Body Width - 50.8 inch

Compact body width makes this image sensor suitable for space-constrained applications.

Sensors or Transducers Type - IMAGE SENSOR,CCD

CCD image sensors are known for their high-quality image output, making this product a good choice for applications requiring top-notch image quality.

Package Shape or Style - SQUARE

Square package shape allows for easier integration into systems and more efficient use of space.

Minimum Supply Voltage - 14.5 V

Lower minimum supply voltage helps in reducing power consumption and increasing overall efficiency of the system.

Maximum Operating Temperature - 60 °C

Wide operating temperature range allows for usage in various environmental conditions, making this product versatile.

Horizontal Pixel - 4096

High horizontal pixel count enables capturing detailed and wide-angle images, making this image sensor ideal for applications requiring high-resolution images.

Minimum Operating Temperature - -60 °C

Wide operating temperature range allows for usage in extreme cold conditions, expanding the range of applications where this sensor can be used.

Housing - CERAMIC

Ceramic housing provides durability and reliability, making this product suitable for long-term use in harsh environments.

Dynamic Range - 76 dB

High dynamic range allows for capturing both bright and dark areas in a scene with great detail, making this sensor a good choice for high-contrast scenes.

Vertical Pixel - 4096

High vertical pixel count enables capturing detailed and tall images, suitable for applications requiring high-resolution vertical images.

Body Length/Diameter - 50.8 mm

Compact body length/diameter makes this image sensor easy to integrate into various system designs.

Spectral Response (nm) - 400-800

Wide spectral response range allows for capturing images across a broad spectrum of light, making this sensor versatile for different lighting conditions.

Data Rate - 10 Mbps

High data rate enables fast image capture and transfer, making this sensor suitable for real-time imaging applications.

Termination Type - SOLDER

Solder termination provides reliable connections for seamless integration into systems, ensuring long-term performance.

Array Type - FULL FRAME

Full-frame array type ensures that the entire image sensor area is utilized for capturing images, resulting in high-quality and detailed images.

Mounting Feature - THROUGH HOLE MOUNT

Through-hole mounting feature allows for secure and stable installation of the image sensor in a variety of systems, ensuring reliable performance.

Technical Specifications

Image Sensors KAF-16801-AAA-DP-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 13 MICRO VOLT PER ELECTRON

Array Type:

FULL FRAME

Body Width:

50.8 inch

Body Length/Diameter:

50.8 mm

Data Rate:

10 Mbps

Dynamic Range:

76 dB

Horizontal Pixel:

4096

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-60 Cel

Package Shape or Style:

Pixel Size (um):

9X9

Sensors or Transducers Type:

Spectral Response (nm):

400-800

Maximum Supply Voltage:

17 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

4096

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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