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MT9V024IA7XTM-DP

Onsemi

MT9V024IA7XTM-DP by Onsemi

MT9V024IA7XTM-DP by Onsemi features a 6x6 um pixel size, 27 MHz master clock, and 100 dB dynamic range. Ideal for image sensing applications in devices requiring high-resolution imaging capabilities.

Median Price

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Lifecycle Status

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7

In-Stock Inventory

1k+

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Flip Electronics (Authorized)

USA . 13,000 parts In-Stock

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Chip Stock

USA . 6,700 parts In-Stock

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USA . 6,097 parts In-Stock

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Vyrian

USA . 2,271 parts In-Stock

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Digiode

USA . 1,697 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,469 parts In-Stock

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Nova Conductors

Japan . 1,000 parts In-Stock

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Aztec Data Supply Inc.

USA . 65 parts In-Stock

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$1.480

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$1.480

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AZTECH Wire

Italy . 579 parts In-Stock

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$19.560

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Ampacity Inc.

Singapore . 12,923 parts In-Stock

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$37.750

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Semicontronic

India . 12,787 parts In-Stock

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$54.750

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$53.381

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$53.108

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Lixinc

USA . 11,133 parts In-Stock

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Futuretech Components

Singapore . 8,000 parts In-Stock

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TANS Electronics

Latvia . 6,838 parts In-Stock

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Kulean Microsystems

USA . 5,965 parts In-Stock

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SupplyDigital Components

Austria . 3,659 parts In-Stock

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S.R.D Solutions

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Continental Prestige Electronics

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Argo Parts USA

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Problanco Electronics

Mexico . 1,171 parts In-Stock

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Bastille Electronics

Australia . 800 parts In-Stock

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Corphita

USA . 402 parts In-Stock

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Infinite Electronics LLP (Excess)

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Formix International (Excess)

India . 388 parts In-Stock

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Advanced Electronics

New Zealand . 341 parts In-Stock

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Corohmni

South Africa . 315 parts In-Stock

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UHIMA Technologies

Türkiye . 48 parts In-Stock

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Overview

Unleash the power of cutting-edge imaging technology with the MT9V024IA7XTM-DP from Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality image sensors that are revolutionizing the way we capture and process visual data. Ideal for a wide range of applications, this innovative sensor offers unmatched precision and clarity, providing customers with superior performance and reliability. Elevate your imaging experience with the MT9V024IA7XTM-DP and discover the endless possibilities it brings to your projects.

Feature Benefit Bullets

Pixel Size (um): 6X6

Smaller pixel size allows for higher resolution images to be captured with more detail.

Maximum Supply Voltage: 3.6 V

Allows for a stable and efficient power supply for the image sensor.

Master Clock: 27 MHz

High master clock frequency ensures fast and accurate data processing.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors are known for their low power consumption and high image quality.

Output Range: 0.30-3V

Wide output range allows for versatility in capturing images in different lighting conditions.

Dynamic Range: 100 dB

High dynamic range enables the sensor to capture a wide range of bright and dark areas in an image.

Optical Format (inch): 1/3

Standard optical format suitable for a wide range of imaging applications.

Output Interface Type: 2-WIRE INTERFACE

Simple and efficient 2-wire interface for easy integration with other devices.

Frame Rate: 60 fps

High frame rate allows for smooth and fluid video capture.

Mounting Feature: SURFACE MOUNT

Surface mount allows for easy and secure installation in electronic devices.

Technical Specifications

Image Sensors MT9V024IA7XTM-DP attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.3 mm

Body Length/Diameter:

9 mm

Dynamic Range:

100 dB

Frame Rate:

60 fps

Horizontal Pixel:

752

JESD-609 Code:

e1

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

6X6

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Terminal Finish:

TIN SILVER COPPER

Termination Type:

SOLDER

Vertical Pixel:

480

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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