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MT9V034C12STM-DR

Onsemi

MT9V034C12STM-DR by Onsemi

Onsemi's MT9V034C12STM-DR is a 1/3-inch CMOS image sensor with 752x480 pixels, offering a dynamic range of 100dB. Operating at 60fps with a pixel size of 6x6um, it has an output interface type of 2-WIRE INTERFACE. Ideal for applications requiring high-resolution imaging and fast frame rates in compact designs.

Median Price

$14.519

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,020 parts In-Stock

1+ parts

$13.350

100+ parts

$12.550

1k+ parts

$11.350

10k+ parts

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1,020

$13.350

$12.550

$11.350

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Avnet

USA . 7,600 parts In-Stock

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7,600

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Verical

USA . 1,016 parts In-Stock

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$15.688

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$14.188

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1,016

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$15.688

$14.188

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Distributors (In-Stock)

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Digiode

USA . 630 parts In-Stock

1+ parts

$12.682

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630

$12.682

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Nova Conductors

Japan . 1,000 parts In-Stock

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$13.273

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$13.273

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Chip Stock

USA . 18,700 parts In-Stock

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Bristol Electronics

USA . 15,200 parts In-Stock

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15,200

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Component Sense

UK . 4,055 parts In-Stock

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Vyrian

USA . 2,637 parts In-Stock

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Prism Electronics

USA . 1 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,246 parts In-Stock

1+ parts

$3.300

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$3.300

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iBuyXS LLC

. 15,200 parts In-Stock

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$7.990

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$7.990

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Semicontronic

India . 3,141 parts In-Stock

1+ parts

$11.350

100+ parts

$11.066

1k+ parts

$11.010

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3,141

$11.350

$11.066

$11.010

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Ampacity Inc.

Singapore . 616 parts In-Stock

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$11.350

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616

$11.350

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Corphita

USA . 2,251 parts In-Stock

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$12.015

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$12.015

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Corohmni

South Africa . 492 parts In-Stock

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$13.008

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492

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Microchip USA

USA . 1,948 parts In-Stock

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$13.135

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Netroflash

USA . 1,000 parts In-Stock

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$13.273

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$13.273

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Continental Prestige Electronics

USA . 553 parts In-Stock

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$13.273

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$13.008

553

$13.273

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$13.008

Advanced Electronics

New Zealand . 100 parts In-Stock

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$13.538

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$13.538

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$13.538

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100

$13.538

$13.538

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AZTECH Wire

Italy . 196 parts In-Stock

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$14.770

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BidChips

USA . 15,200 parts In-Stock

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Perfect Parts

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Lixinc

USA . 9,361 parts In-Stock

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Problanco Electronics

Mexico . 8,393 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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TANS Electronics

Latvia . 6,702 parts In-Stock

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Argo Parts USA

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Kepictronics

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GreenTree Electronics

Israel . 3,040 parts In-Stock

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S.R.D Solutions

India . 3,000 parts In-Stock

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RC Electronics

USA . 1,686 parts In-Stock

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SupplyDigital Components

Austria . 1,377 parts In-Stock

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Kulean Microsystems

USA . 882 parts In-Stock

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UHIMA Technologies

Türkiye . 542 parts In-Stock

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Overview

Enhance your imaging experience with the Onsemi MT9V034C12STM-DR Image Sensor! From its superior quality to its innovative design, this product is a game-changer in the field of image sensors. With applications ranging from security cameras to industrial automation, this sensor offers unparalleled value and benefits to customers looking for high-performance imaging solutions. Trust Onsemi's reputation for excellence and choose the MT9V034C12STM-DR for all your imaging needs.

Feature Benefit Bullets

Pixel Size (um): 6X6

Small pixel size allows for higher resolution images with finer details.

Maximum Supply Voltage: 3.6 V

Higher supply voltage ensures stable and reliable operation of the image sensor.

Master Clock: 27 MHz

High master clock frequency enables fast data processing and high frame rates.

Body Width: 11.43 inch

Compact size makes this image sensor suitable for various applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors offer low noise, high sensitivity, and low power consumption.

Body Height: 2.3 mm

Low profile design allows for easy integration into different devices or systems.

Package Shape or Style: SQUARE

Square package shape provides easy mounting and alignment during installation.

Minimum Supply Voltage: 3 V

Low minimum supply voltage helps in reducing power consumption and extending battery life.

Maximum Operating Temperature: 70 °C

Wide operating temperature range ensures reliable performance in various environmental conditions.

Horizontal Pixel: 752

High pixel count results in sharper and detailed images.

Output Range: -11-11mA

Wide output range provides flexibility in signal processing and compatibility with different systems.

Output Type: DIGITAL CURRENT

Digital current output simplifies signal processing and reduces noise interference.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature ensures the sensor can function in cold environments.

Maximum Operating Current: 60 mA

Low operating current helps in reducing power consumption and heat generation.

Housing: CERAMIC

Ceramic housing offers durability, thermal stability, and protection against environmental factors.

Dynamic Range: 100 dB

High dynamic range enables the sensor to capture a wide range of light intensities and details.

Vertical Pixel: 480

Good vertical resolution for capturing images with depth and clarity.

Body Length/Diameter: 11.43 mm

Compact size and dimensions make it easy to integrate into various devices or applications.

Optical Format (inch): 1/3

1/3 inch optical format is widely used in cameras, providing good image quality and compatibility.

Termination Type: SOLDER

Solder termination offers secure and reliable connections for easy installation.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connectivity and communication with other system components.

Frame Rate: 60 fps

High frame rate allows for smooth and real-time image capture and video recording.

Array Type: FRAME

Frame array type simplifies data processing and image capture for various applications.

Sensitivity (V/lx.s): 4.8 V/lx.s

High sensitivity results in better image quality and performance in low-light conditions.

Mounting Feature: SURFACE MOUNT

Surface mount capability facilitates easy installation on PCBs or other surfaces for seamless integration.

Technical Specifications

Image Sensors MT9V034C12STM-DR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

DUAL OUTPUT

Array Type:

FRAME

Body Width:

11.43 inch

Body Height:

2.3 mm

Body Length/Diameter:

11.43 mm

Dynamic Range:

100 dB

Frame Rate:

60 fps

Horizontal Pixel:

752

Housing:

CERAMIC

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

6X6

Sensitivity (V/lx.s):

4.8 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Termination Type:

SOLDER

Vertical Pixel:

480

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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