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AR0330CM1C12SHAA0-DP1

Onsemi

AR0330CM1C12SHAA0-DP1 by Onsemi

The Onsemi AR0330CM1C12SHAA0-DP1 is a 2.2x2.2 um CMOS image sensor with 2304 horizontal pixels and 1536 vertical pixels. It operates at a max supply voltage of 1.9V, has a master clock of 27 MHz, and offers a dynamic range of 69.5 dB. Ideal for applications requiring high-resolution imaging with digital output interface and surface mounting feature at temperatures ranging from -30 to 70 °C.

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Overview

Enhance your imaging projects with the high-quality AR0330CM1C12SHAA0-DP1 image sensor by Onsemi. As a leading manufacturer in the industry, Onsemi delivers cutting-edge technology and reliability. This sensor is perfect for applications like surveillance cameras, automotive systems, and industrial equipment. With its impressive dynamic range, fast frame rate, and compact design, this sensor offers exceptional value and performance for your imaging needs. Upgrade your projects today with the AR0330CM1C12SHAA0-DP1 and experience the difference in quality and efficiency.

Feature Benefit Bullets

Pixel Size (um): 2.2X2.2

Small pixel size allows for high resolution images to be captured with fine details.

Maximum Supply Voltage: 1.9 V

Low maximum supply voltage results in lower power consumption and increased efficiency.

Master Clock: 27 MHz

High master clock frequency enables fast data processing and high frame rates.

Body Width: 11.43 inch

Compact body width allows for easy integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors offer low power consumption and high sensitivity, making them ideal for image capture applications.

Body Height: 2.275 mm

Slim body height allows for sleek and slim design of the final product.

Package Shape or Style: SQUARE

Square package shape provides versatility in mounting options and space-saving design.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage ensures stable operation even with low power input.

Maximum Operating Temperature: 70 °C

High maximum operating temperature ensures reliable performance even in harsh environments.

Horizontal Pixel: 2304

High horizontal pixel count results in detailed and high-resolution images.

Output Range: 0.40-1.40V

Wide output range allows for capturing images in various lighting conditions with accurate color reproduction.

Output Type: DIGITAL VOLTAGE

Digital output simplifies data processing and transmission for seamless integration with other digital systems.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature ensures reliable performance even in extreme cold conditions.

Maximum Operating Current: 137 mA

Low maximum operating current results in lower power consumption and extended battery life.

Housing: CERAMIC

Ceramic housing provides durability and thermal stability for long-term use.

Dynamic Range: 69.5 dB

High dynamic range allows for capturing a wide range of light intensities with accurate detail.

Vertical Pixel: 1536

High vertical pixel count results in detailed and high-resolution images.

Body Length/Diameter: 11.43 mm

Compact body length/diameter allows for easy integration into various devices.

Spectral Response (nm): 350-1150

Wide spectral response range allows for capturing images in various lighting conditions with accurate color reproduction.

Optical Format (inch): 1/3

Common optical format makes it compatible with a wide range of lenses and optical systems.

Termination Type: SOLDER

Solder termination provides a reliable connection for seamless integration into the final product.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connectivity and data transfer for easy integration with other systems.

Frame Rate: 60 fps

High frame rate allows for capturing fast-moving subjects with smooth and clear image quality.

Array Type: FRAME

Frame array type enables simultaneous capture of multiple frames for efficient image processing.

Sensitivity (V/lx.s): 2 V/lx.s

High sensitivity allows for capturing clear images even in low-light conditions.

Mounting Feature: SURFACE MOUNT

Surface mounting feature allows for easy and secure installation onto PCBs or other surfaces.

Technical Specifications

Image Sensors AR0330CM1C12SHAA0-DP1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.7-2.9V

Array Type:

FRAME

Body Width:

11.43 inch

Body Height:

2.275 mm

Body Length/Diameter:

11.43 mm

Dynamic Range:

69.5 dB

Frame Rate:

60 fps

Horizontal Pixel:

2304

Housing:

CERAMIC

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

137 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

2.2X2.2

Sensitivity (V/lx.s):

2 V/lx.s

Sensors or Transducers Type:

Spectral Response (nm):

350-1150

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1536

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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