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AR0330CM1C12SUD20

Onsemi

AR0330CM1C12SUD20 by Onsemi

The Onsemi AR0330CM1C12SUD20 image sensor features 2.2x2.2 um pixel size, 24 MHz master clock, and 2304 horizontal pixels. With a max supply voltage of 1.9V, it is ideal for applications requiring high-resolution imaging at up to 60 fps such as surveillance cameras and automotive vision systems.

Median Price

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Lifecycle Status

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Flip Electronics

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Native Components

USA . 140 parts In-Stock

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Northwest PG Solutions

USA . 1,017 parts In-Stock

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Perfect Parts

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GreenTree Electronics

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TANS Electronics

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SupplyDigital Components

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Kulean Microsystems

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Problanco Electronics

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Overview

Capture every moment with crystal clear precision using the AR0330CM1C12SUD20 Image Sensor by Onsemi. As a leading manufacturer in the industry, Onsemi has crafted this cutting-edge sensor to deliver unrivaled quality and performance. Ideal for applications in security cameras, automotive imaging, and industrial inspection systems, this sensor offers customers unparalleled value with its wide dynamic range, high frame rate, and reliable digital output. Trust Onsemi to provide you with the tools you need to take your imaging solutions to the next level.

Feature Benefit Bullets

Pixel Size (um): 2.2X2.2

Smaller pixel size allows for higher resolution images to be captured, making this image sensor suitable for applications where detailed images are required.

Maximum Supply Voltage: 1.9 V

Low maximum supply voltage helps in reducing power consumption and heat generated, leading to energy efficiency.

Master Clock: 24 MHz

High master clock frequency enables fast data processing and image capturing, making this image sensor suitable for applications requiring quick response times.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors offer low power consumption, high speed, and noise immunity, making them a popular choice in image sensor technology.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage ensures that the image sensor can operate efficiently even at lower power levels.

Maximum Operating Temperature: 70 °C

High maximum operating temperature tolerance allows the image sensor to be used in a wide range of environments without compromising performance.

Horizontal Pixel: 2304

High horizontal pixel count enables the image sensor to capture detailed and high-resolution images with fine details.

Output Range: 0.4-1.4V

Wide output range allows for flexibility in signal processing and conversion, making this image sensor suitable for various applications.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies signal processing and integration with other digital systems, enhancing overall system efficiency.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature ensures that the image sensor can function reliably in cold environments without performance degradation.

Maximum Operating Current: 137 mA

Moderate maximum operating current ensures that the image sensor operates efficiently without drawing excessive power.

Dynamic Range: 69.5 dB

High dynamic range allows the image sensor to capture both bright and dark details in a scene, resulting in high-quality images with balanced exposure.

Vertical Pixel: 1536

High vertical pixel count enhances the image sensor's ability to capture detailed images with sharp vertical resolution.

Optical Format (inch): 1/3

Standard optical format allows for easy integration with existing optical systems and components, making this image sensor versatile for various applications.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connectivity and communication with external systems, making integration of the image sensor straightforward and user-friendly.

Frame Rate: 60 fps

High frame rate enables smooth and continuous video capturing, making this image sensor suitable for applications requiring real-time image processing.

Array Type: FRAME

Frame array design allows for efficient image capturing and processing, ensuring that the image sensor delivers high-quality images consistently.

Mounting Feature: SURFACE MOUNT

Surface mount capability simplifies the installation and integration of the image sensor into electronic devices, providing ease of use and versatility.

Technical Specifications

Image Sensors AR0330CM1C12SUD20 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.7-2.9V

Array Type:

FRAME

Dynamic Range:

69.5 dB

Frame Rate:

60 fps

Horizontal Pixel:

2304

Master Clock:

24 MHz

Mounting Feature:

Maximum Operating Current:

137 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Pixel Size (um):

2.2X2.2

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Vertical Pixel:

1536

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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