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MT9V034C12STC-DP1

Onsemi

MT9V034C12STC-DP1 by Onsemi

Onsemi's MT9V034C12STC-DP1 is a 6x6 um CMOS image sensor with 752H x 480V pixels, offering a dynamic range of 100 dB. Operating at 3-3.6 V, it has a max frame rate of 60 fps and uses a digital current output interface. Ideal for applications requiring high-resolution imaging in varying lighting conditions.

Median Price

$26.520

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 5 parts In-Stock

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$26.520

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Flip Electronics (Authorized)

USA . 152 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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$15.923

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50

$15.923

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Digiode

USA . 631 parts In-Stock

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$25.194

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Vyrian

USA . 5,350 parts In-Stock

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Flip Electronics

USA . 152 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 596 parts In-Stock

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$3.210

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596

$3.210

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AZTECH Wire

Italy . 808 parts In-Stock

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$8.781

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Corohmni

South Africa . 81 parts In-Stock

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$15.602

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Bastille Electronics

Australia . 55 parts In-Stock

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$15.920

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$15.124

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$14.169

55

$15.920

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$14.169

Continental Prestige Electronics

USA . 825 parts In-Stock

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$15.923

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$15.605

825

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Ampacity Inc.

Singapore . 79 parts In-Stock

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$22.540

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$22.540

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Semicontronic

India . 79 parts In-Stock

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$22.540

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$21.976

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$21.864

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Corphita

USA . 1,272 parts In-Stock

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$23.868

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SupplyDigital Components

Austria . 7,894 parts In-Stock

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Problanco Electronics

Mexico . 5,799 parts In-Stock

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Kulean Microsystems

USA . 4,645 parts In-Stock

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Argo Parts USA

USA . 3,608 parts In-Stock

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TANS Electronics

Latvia . 2,514 parts In-Stock

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UHIMA Technologies

Türkiye . 195 parts In-Stock

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Overview

Capture every moment with the MT9V034C12STC-DP1 Image Sensor by Onsemi. Known for its superior quality and reliability, Onsemi is a trusted manufacturer in the industry. This innovative sensor offers crystal-clear images with a wide dynamic range, making it perfect for applications such as surveillance cameras, automotive vision systems, and barcode scanners. Experience the value of high performance and cutting-edge technology with the MT9V034C12STC-DP1.

Feature Benefit Bullets

Pixel Size (um) 6X6

Smaller pixel size allows for higher resolution and better image quality.

Maximum Supply Voltage 3.6 V

Operates at a safe voltage level, reducing the risk of damage or overheating.

Master Clock 27 MHz

High master clock frequency enables fast data processing and image capture.

Body Width 11.43 inch

Compact body width makes it suitable for applications with limited space.

Sensors or Transducers Type IMAGE SENSOR,CMOS

CMOS image sensor provides high-quality, low-noise images for various applications.

Body Height 2.3 mm

Low profile design for easy integration into devices or systems.

Package Shape or Style SQUARE

Square package shape for easy mounting and efficient use of space.

Minimum Supply Voltage 3 V

Low minimum supply voltage for energy-efficient operation.

Maximum Operating Temperature 70 °C

Wide operating temperature range for use in various environments.

Horizontal Pixel 752

High horizontal pixel count for detailed and sharp images.

Output Type DIGITAL CURRENT

Digital current output for easy integration and data processing.

Minimum Operating Temperature -30 °C

Operates efficiently in low-temperature conditions.

Maximum Operating Current 60 mA

Low operating current for energy-efficient performance.

Dynamic Range 100 dB

Wide dynamic range for capturing both bright and dark areas in the image.

Vertical Pixel 480

Vertical pixel count for capturing detailed images in the vertical direction.

Body Length/Diameter 11.43 mm

Compact body length/diameter for easy installation and integration.

Optical Format (inch) 1/3

Common optical format for compatibility with various lenses and systems.

Termination Type SOLDER

Solder termination for secure and reliable connections.

Output Interface Type 2-WIRE INTERFACE

2-wire interface for easy connectivity and data transfer.

Frame Rate 60 fps

High frame rate for smooth and clear video recording or imaging.

Array Type FRAME

Array type ensures fast and efficient image capture and processing.

Sensitivity (V/lx.s) 4.8 V/lx.s

High sensitivity for capturing images in low-light conditions.

Mounting Feature SURFACE MOUNT

Surface mount feature for easy and secure mounting onto PCBs or other surfaces.

Technical Specifications

Image Sensors MT9V034C12STC-DP1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

DUAL OUTPUT

Array Type:

FRAME

Body Width:

11.43 inch

Body Height:

2.3 mm

Body Length/Diameter:

11.43 mm

Dynamic Range:

100 dB

Frame Rate:

60 fps

Horizontal Pixel:

752

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

6X6

Sensitivity (V/lx.s):

4.8 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Termination Type:

SOLDER

Vertical Pixel:

480

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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