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NOIP1SN0480A-STI1

Onsemi

NOIP1SN0480A-STI1 by Onsemi

NOIP1SN0480A-STI1 by Onsemi is a CMOS image sensor with 4.80x4.80 um pixel size, 68 MHz master clock, and 808 (H) x 608 (V) resolution. Ideal for applications requiring high-speed imaging such as surveillance cameras, drones, and industrial machine vision systems due to its 120 fps frame rate and full-frame array design.

Median Price

$23.615

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 31 parts In-Stock

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$27.910

100+ parts

$22.490

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$21.061

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$27.910

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Future Electronics

Canada . 520 parts In-Stock

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$19.320

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$19.140

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Flip Electronics (Authorized)

USA . 460 parts In-Stock

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460

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Nova Conductors

Japan . 150 parts In-Stock

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$21.970

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Digiode

USA . 1,217 parts In-Stock

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$31.616

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Vyrian

USA . 3,034 parts In-Stock

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IBS Electronics

USA . 520 parts In-Stock

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$27.096

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$26.844

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520

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Flip Electronics

USA . 460 parts In-Stock

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460

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NAC Semi

USA . 420 parts In-Stock

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$30.310

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Distributors (Availability)

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Ampacity Inc.

Singapore . 272 parts In-Stock

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$17.650

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AZTECH Wire

Italy . 189 parts In-Stock

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$17.969

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Corohmni

South Africa . 335 parts In-Stock

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$21.531

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Continental Prestige Electronics

USA . 6,084 parts In-Stock

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$21.970

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$21.531

Netroflash

USA . 50 parts In-Stock

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$21.970

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Corphita

USA . 1,822 parts In-Stock

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Semicontronic

India . 15 parts In-Stock

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$38.410

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$37.450

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$37.258

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Kulean Microsystems

USA . 3,322 parts In-Stock

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Argo Parts USA

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SupplyDigital Components

Austria . 1,576 parts In-Stock

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TANS Electronics

Latvia . 1,311 parts In-Stock

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Problanco Electronics

Mexico . 1,179 parts In-Stock

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UHIMA Technologies

Türkiye . 857 parts In-Stock

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Perfect Parts

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Overview

Capture every moment with crystal-clear precision using the NOIP1SN0480A-STI1 image sensor by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their products, making this sensor perfect for a wide range of applications. Whether you're looking to enhance security systems, improve medical imaging, or elevate your smartphone camera performance, this sensor delivers unparalleled value, benefits, and advantages to meet all your needs. Trust Onsemi to provide cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Pixel Size (um): 4.80X4.80

With a small pixel size, this image sensor is able to capture clear and detailed images with high resolution.

Maximum Supply Voltage: 1.9 V

Operating at a low maximum supply voltage makes this sensor energy efficient and helps in reducing power consumption.

Master Clock: 68 MHz

A high master clock frequency of 68 MHz enables fast data processing and high-speed image capturing.

Body Width: 4.93 inch

The compact body width of 4.93 inches allows for easy integration and placement in various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

Being a CMOS image sensor, it offers low power consumption, high speed, and excellent image quality, making it a reliable choice for imaging applications.

Body Height: 0.75 mm

With a slim body height of 0.75 mm, this sensor can be used in thin devices without adding bulk.

Package Shape or Style: RECTANGULAR

The rectangular package shape provides versatility in mounting and integration options for the sensor.

Minimum Supply Voltage: 1.7 V

Having a low minimum supply voltage ensures operational stability even at lower power levels.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this sensor can perform reliably in a wide range of environmental conditions.

Horizontal Pixel: 808

The high horizontal pixel count of 808 contributes to the sensor's ability to capture detailed and wide images.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures that the sensor can function in cold environments without issues.

Terminal Finish: TIN SILVER COPPER

The terminal finish of TIN SILVER COPPER offers good conductivity and corrosion resistance for long-lasting performance.

Maximum Operating Current: 59 mA

Operating at a maximum current of 59 mA ensures efficient power usage and helps in prolonging the sensor's lifespan.

Dynamic Range: 59 dB

A high dynamic range of 59 dB allows the sensor to capture a wide range of light intensities, resulting in high-quality images with good contrast.

Vertical Pixel: 608

The vertical pixel count of 608 adds to the sensor's ability to capture detailed and high-resolution images in portrait orientation.

Body Length/Diameter: 6.13 mm

With a compact body length of 6.13 mm, this sensor can be easily integrated into devices with space constraints.

Optical Format (inch): 1/3.6

The 1/3.6 inch optical format provides a good balance between sensor size and image quality, making it suitable for various imaging applications.

Data Rate: 68 Mbps

A high data rate of 68 Mbps ensures fast transmission of image data, making this sensor ideal for real-time imaging applications.

Termination Type: SOLDER

The solder termination type offers a reliable and secure connection for stable performance of the sensor in different operating conditions.

Output Interface Type: 4-WIRE INTERFACE

The 4-wire interface type provides a standard communication protocol for seamless integration with other devices and systems.

Frame Rate: 120 fps

With a high frame rate of 120 fps, this sensor can capture fast-moving scenes with smooth and clear image sequences.

Array Type: FULL FRAME

Being a full-frame array type, this sensor offers consistent and uniform image quality across the entire sensor area.

Mounting Feature: SURFACE MOUNT

The surface mounting feature allows for easy and secure installation of the sensor on PCBs or other surfaces for quick integration.

Technical Specifications

Image Sensors NOIP1SN0480A-STI1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3V NOMINAL SUPPLY VOLTAGE; IT ALSO HAVE MASTER CLOCK 340 MHZ (10-BIT) AND 272 MHZ (8-BIT) WHEN PLL IS NOT USED

Array Type:

FULL FRAME

Body Width:

4.93 inch

Body Height:

.75 mm

Body Length/Diameter:

6.13 mm

Data Rate:

68 Mbps

Dynamic Range:

59 dB

Frame Rate:

120 fps

Horizontal Pixel:

808

JESD-609 Code:

e1

Master Clock:

68 MHz

Mounting Feature:

Maximum Operating Current:

59 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3.6

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.80X4.80

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

TIN SILVER COPPER

Termination Type:

SOLDER

Vertical Pixel:

608

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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