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NOIP1SE5000A-QTI

Onsemi

NOIP1SE5000A-QTI by Onsemi

NOIP1SE5000A-QTI by Onsemi is a 4.8x4.8 um CMOS image sensor with 2592x2048 pixels, offering a dynamic range of 60 dB and sensitivity of 7.5 V/lx.s. It operates b/w -40 to 85 °C, has a max supply voltage of 1.9 V, and supports a frame rate of up to 100 fps. Ideal for applications requiring high-resolution imaging in various lighting conditions.

Median Price

$248.025

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 97 parts In-Stock

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$211.090

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$198.420

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$185.760

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97

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DigiKey

USA . 42 parts In-Stock

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$257.500

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$224.533

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Verical

USA . 97 parts In-Stock

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$248.025

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$232.200

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97

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$232.200

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Digiode

USA . 589 parts In-Stock

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$232.845

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Vyrian

USA . 6,802 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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Flip Electronics

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TME

Poland . 26 parts In-Stock

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$282.280

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AZTECH Wire

Italy . 779 parts In-Stock

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$13.010

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Corphita

USA . 507 parts In-Stock

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$220.590

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Corohmni

South Africa . 76 parts In-Stock

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$245.100

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SupplyDigital Components

Austria . 7,612 parts In-Stock

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TANS Electronics

Latvia . 4,356 parts In-Stock

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Kepictronics

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Problanco Electronics

Mexico . 2,465 parts In-Stock

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Netroflash

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Authorized Procurement Solutions

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UHIMA Technologies

Türkiye . 365 parts In-Stock

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Kulean Microsystems

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Overview

Enhance your imaging experience with the NOIP1SE5000A-QTI from Onsemi, a leading manufacturer of top-quality image sensors. Designed to deliver exceptional performance and reliability, this sensor is ideal for a wide range of applications. Whether you're capturing stunning visuals for security systems or enhancing machine vision capabilities, this sensor offers unparalleled value with its high sensitivity, fast frame rate, and impressive dynamic range. Trust Onsemi to provide cutting-edge technology that brings your projects to life.

Feature Benefit Bullets

Pixel Size (um): 4.8X4.8

Provides high resolution and detailed image output

Maximum Supply Voltage: 1.9 V

Operating within safe voltage range for stability and reliability

Master Clock: 360 MHz

Allows for fast processing and data transfer

Body Width: 19 inch

Compact size for easy integration in various devices

Sensors or Transducers Type: IMAGE SENSOR, CMOS

Utilizes CMOS technology for efficient image capturing

Body Height: 2.41 mm

Slim profile for flexible installation options

Package Shape or Style: SQUARE

Space-saving design for compact devices

Minimum Supply Voltage: 1.7 V

Low power consumption for energy efficiency

Maximum Operating Temperature: 85 °C

Suitable for operation in various environmental conditions

Horizontal Pixel: 2592

High pixel count for sharp and clear images

Minimum Operating Temperature: -40 °C

Can function in extreme cold temperatures

Dynamic Range: 60 dB

Captures a wide range of light intensities for accurate image reproduction

Vertical Pixel: 2048

Provides resolution for detailed vertical image capture

Body Length/Diameter: 19 mm

Compact form factor for versatile installation options

Spectral Response (nm): 400-1000

Covers a wide range of light wavelengths for diverse imaging requirements

Termination Type: SOLDER

Secure connection for stable operation

Output Interface Type: 4-WIRE INTERFACE

Efficient data transfer for quick processing

Frame Rate: 100 fps

High frame rate for smooth and fluid image capture

Array Type: FRAME

Organized array structure for systematic image capture

Sensitivity (V/lx.s): 7.5 V/lx.s

High sensitivity for capturing clear images in various lighting conditions

Mounting Feature: SURFACE MOUNT

Convenient mounting option for easy installation

Technical Specifications

Image Sensors NOIP1SE5000A-QTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3 V NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

19 inch

Body Height:

2.41 mm

Body Length/Diameter:

19 mm

Dynamic Range:

60 dB

Frame Rate:

100 fps

Horizontal Pixel:

2592

Master Clock:

360 MHz

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.8X4.8

Sensitivity (V/lx.s):

7.5 V/lx.s

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

2048

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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