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KAF-16803-ABA-DP-BA

Onsemi

KAF-16803-ABA-DP-BA by Onsemi

KAF-16803-ABA-DP-BA by Onsemi is an image sensor with 9x9 um pixel size, 4096 horizontal and vertical pixels. It operates b/w -60 to 60 °C, has a dynamic range of 80 dB, and spectral response of 300-1100 nm. Ideal for high-resolution imaging applications due to its full-frame array design and ceramic housing.

Median Price

$23,661.500

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Arrow

USA . 5 parts In-Stock

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Verical

USA . 5 parts In-Stock

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Digiode

USA . 755 parts In-Stock

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Vyrian

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Corphita

USA . 983 parts In-Stock

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Corohmni

South Africa . 208 parts In-Stock

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Kulean Microsystems

USA . 7,544 parts In-Stock

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Authorized Procurement Solutions

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SupplyDigital Components

Austria . 4,678 parts In-Stock

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TANS Electronics

Latvia . 3,637 parts In-Stock

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Problanco Electronics

Mexico . 2,723 parts In-Stock

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UHIMA Technologies

Türkiye . 324 parts In-Stock

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Overview

Capture every detail with the KAF-16803-ABA-DP-BA image sensor by Onsemi. Known for their superior quality and reliability, Onsemi delivers cutting-edge technology in the field of image sensors. Ideal for a wide range of applications, this sensor offers unmatched precision and clarity, making it a valuable asset for professionals in various industries. Experience the benefits of high performance and exceptional value with the KAF-16803-ABA-DP-BA, ensuring you always get the best results for your imaging needs.

Feature Benefit Bullets

Pixel Size (um): 9X9

Small pixel size allows for higher resolution and better image quality.

Maximum Supply Voltage: 17 V

Higher supply voltage provides flexibility in power input and ensures stable performance.

Body Width: 50.8 inch

Compact body width makes it easier to integrate into various devices or systems.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD image sensor technology offers high-quality images with low noise levels.

Package Shape or Style: SQUARE

Square package shape allows for easy mounting and alignment in different configurations.

Minimum Supply Voltage: 14.75 V

Low minimum supply voltage ensures efficient power usage and prolonged battery life.

Maximum Operating Temperature: 60 °C

Wide operating temperature range allows for use in various environments without performance issues.

Horizontal Pixel: 4096

High horizontal pixel count results in detailed, high-resolution images.

Minimum Operating Temperature: -60 °C

Low minimum operating temperature ensures functionality even in extremely cold conditions.

Housing: CERAMIC

Ceramic housing provides durability and protection for the sensitive image sensor components.

Dynamic Range: 80 dB

Wide dynamic range allows for capturing a wide range of light intensity levels in the image.

Vertical Pixel: 4096

High vertical pixel count ensures detailed and sharp images in both horizontal and vertical dimensions.

Body Length/Diameter: 50.8 mm

Compact body length/diameter makes the sensor easy to handle and install.

Spectral Response (nm): 300-1100

Wide spectral response range enables capturing images in a broad range of lighting conditions.

Data Rate: 10 Mbps

High data rate allows for fast and real-time data transfer for quick image processing.

Termination Type: SOLDER

Solder termination type provides secure and reliable connections for stable performance.

Array Type: FULL FRAME

Full-frame array type captures a complete image without cropping or distortion, resulting in accurate representation.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting feature ensures secure and stable installation in various devices or systems.

Technical Specifications

Image Sensors KAF-16803-ABA-DP-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 22 MICRO VOLT PER ELECTRON

Array Type:

FULL FRAME

Body Width:

50.8 inch

Body Length/Diameter:

50.8 mm

Data Rate:

10 Mbps

Dynamic Range:

80 dB

Horizontal Pixel:

4096

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-60 Cel

Package Shape or Style:

Pixel Size (um):

9X9

Sensors or Transducers Type:

Spectral Response (nm):

300-1100

Maximum Supply Voltage:

17 V

Minimum Supply Voltage:

14.75 V

Termination Type:

SOLDER

Vertical Pixel:

4096

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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