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MT9M001C12STM-TP

Onsemi

MT9M001C12STM-TP by Onsemi

Onsemi's MT9M001C12STM-TP is a 1/2 inch CMOS image sensor with 1280x1024 resolution, offering a pixel size of 5.2um. Operating at up to 70°C, it has a max supply voltage of 3.6V and supports a master clock of 48MHz. Ideal for applications requiring high-resolution imaging in compact devices.

Median Price

$19.642

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Nova Conductors

Japan . 550 parts In-Stock

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Vyrian

USA . 4,678 parts In-Stock

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Digiode

USA . 1,154 parts In-Stock

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Flip Electronics

USA . 850 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,496 parts In-Stock

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$1.780

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AZTECH Wire

Italy . 439 parts In-Stock

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$19.135

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Corohmni

South Africa . 57 parts In-Stock

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$19.249

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Continental Prestige Electronics

USA . 275 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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Semicontronic

India . 752 parts In-Stock

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$26.750

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$26.081

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$25.948

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Ampacity Inc.

Singapore . 1,496 parts In-Stock

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$46.750

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Argo Parts USA

USA . 4,740 parts In-Stock

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Problanco Electronics

Mexico . 4,286 parts In-Stock

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Kulean Microsystems

USA . 3,196 parts In-Stock

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SupplyDigital Components

Austria . 2,011 parts In-Stock

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TANS Electronics

Latvia . 1,067 parts In-Stock

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UHIMA Technologies

Türkiye . 905 parts In-Stock

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Corphita

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Overview

Enhance your imaging experience with the Onsemi MT9M001C12STM-TP Image Sensor. With a pixel size of 5.2X5.2 um and a maximum supply voltage of 3.6 V, this high-quality sensor delivers exceptional performance for a wide range of applications. Onsemi's reputation for reliability and innovation shines through in this product, providing customers with value, benefits, and advantages that set it apart from the competition. Whether you're in the automotive, security, or industrial sector, this image sensor is a must-have for achieving superior image quality and clarity. Elevate your imaging solutions with the Onsemi MT9M001C12STM-TP.

Feature Benefit Bullets

Pixel Size (um)

Small pixel size allows for higher resolution images to be captured with more detail.

Maximum Supply Voltage

Higher maximum supply voltage allows for more flexibility in power source options.

Master Clock

High master clock frequency enables fast data transfer and processing capabilities.

Body Width

Compact body width makes the sensor suitable for applications where space is limited.

Sensors or Transducers Type

CMOS image sensor technology provides high-quality image capture and low power consumption.

Maximum Operating Temperature

Wide operating temperature range allows for use in various environmental conditions.

Horizontal Pixel

High horizontal pixel count results in detailed and sharp images.

Output Type

Digital voltage output simplifies interfacing with other digital systems.

Dynamic Range

Wide dynamic range ensures accurate capture of both bright and dark areas in an image.

Vertical Pixel

High vertical pixel count contributes to the overall image quality and resolution.

Optical Format (inch)

1/2 inch optical format is standard and widely compatible with various lenses and accessories.

Output Interface Type

2-wire interface simplifies connectivity and data transfer with external devices.

Frame Rate

High frame rate allows for smooth and real-time imaging for video applications.

Mounting Feature

Surface mount feature simplifies the installation and integration of the sensor into a system.

Technical Specifications

Image Sensors MT9M001C12STM-TP attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Body Width:

14.22 inch

Body Height:

2.21 mm

Body Length/Diameter:

14.22 mm

Dynamic Range:

68.2 dB

Frame Rate:

30 fps

Horizontal Pixel:

1280

Housing:

CERAMIC

Master Clock:

48 MHz

Mounting Feature:

Maximum Operating Current:

110 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Optical Format (inch):

1/2

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

5.2X5.2

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Termination Type:

SOLDER

Vertical Pixel:

1024

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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