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MT9M015D00STCC14EC1

Onsemi

MT9M015D00STCC14EC1 by Onsemi

Onsemi's MT9M015D00STCC14EC1 is a CMOS image sensor with 2.20x2.20 um pixel size, 64 MHz master clock, and 1288 horizontal pixels. It operates at 1.7-1.9V, offers a dynamic range of 68.4 dB, and has an optical format of 1/5 inch. Ideal for frame array applications with a digital current output interface at up to 30 fps frame rate.

Median Price

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Lifecycle Status

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Vyrian

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TANS Electronics

Latvia . 7,558 parts In-Stock

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SupplyDigital Components

Austria . 4,559 parts In-Stock

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Problanco Electronics

Mexico . 3,134 parts In-Stock

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Kulean Microsystems

USA . 2,008 parts In-Stock

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Corphita

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Corohmni

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Overview

Capture every moment with the MT9M015D00STCC14EC1 by Onsemi, a high-quality image sensor that delivers exceptional performance in a compact design. Manufactured by Onsemi, a trusted name in the industry, this sensor is perfect for applications such as security cameras, medical imaging, and industrial automation. With its advanced features and reliable operation, this product offers unmatched value and benefits to customers, ensuring crisp and clear images every time. Trust Onsemi to provide you with the cutting-edge technology you need for your imaging projects.

Feature Benefit Bullets

Pixel Size (um): 2.20X2.20

Smaller pixel size allows for higher resolution images with more detail.

Maximum Supply Voltage: 1.9 V

Low maximum supply voltage makes the product energy efficient and reduces power consumption.

Master Clock: 64 MHz

High master clock frequency enables faster data processing and higher frame rates.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensors provide high image quality, low power consumption, and fast data readout.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage ensures stable operation and reliability of the product.

Horizontal Pixel: 1288

High horizontal pixel count results in sharper and more detailed images.

Output Range: 2.60-22.30mA

Wide output range allows for capturing images in various lighting conditions.

Output Type: DIGITAL CURRENT

Digital current output provides accurate and reliable image data for further processing.

Maximum Operating Current: 30 mA

Low maximum operating current reduces heat dissipation and extends the product's lifespan.

Dynamic Range: 68.4 dB

High dynamic range allows the sensor to capture a wide range of light intensities without losing detail.

Vertical Pixel: 1032

High vertical pixel count contributes to the overall image resolution and quality.

Optical Format (inch): 1/5

Optical format of 1/5 inch is suitable for compact and slim imaging devices.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies the connectivity and integration of the sensor with other components.

Frame Rate: 30 fps

High frame rate of 30 fps ensures smooth and fluid video recording and playback.

Array Type: FRAME

Frame array type simplifies the readout process and improves overall sensor performance.

Technical Specifications

Image Sensors MT9M015D00STCC14EC1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.60-3.10 V

Array Type:

FRAME

Dynamic Range:

68.4 dB

Frame Rate:

30 fps

Horizontal Pixel:

1288

Master Clock:

64 MHz

Maximum Operating Current:

30 mA

Optical Format (inch):

1/5

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Pixel Size (um):

2.20X2.20

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Vertical Pixel:

1032

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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