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AR0135CS2M25SUD20

Onsemi

AR0135CS2M25SUD20 by Onsemi

The Onsemi AR0135CS2M25SUD20 is a 1/3 inch CMOS image sensor with 1280x960 resolution. It operates at a max supply voltage of 1.95V and has a master clock of 50MHz. With an output range of 0.40-1.50V, it is ideal for applications requiring high-resolution imaging at up to 54fps.

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AR0135CS2M25SUD20 by Onsemi
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Problanco Electronics

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Kulean Microsystems

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Northwest PG Solutions

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Native Components

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Overview

Capture stunning images with the AR0135CS2M25SUD20 image sensor from Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in all their products. Ideal for applications in automotive, surveillance, and consumer devices, this image sensor offers exceptional value with its high performance and versatility. Elevate your imaging experience and unlock endless possibilities with the AR0135CS2M25SUD20 by Onsemi.

Feature Benefit Bullets

Pixel Size (um): 3.75

Having a small pixel size of 3.75um allows for high resolution images to be captured, making this product ideal for applications where detailed images are required.

Maximum Supply Voltage: 1.95 V

The maximum supply voltage of 1.95V ensures that the image sensor operates within safe voltage limits, providing stability and reliability to the system it is integrated into.

Master Clock: 50 MHz

With a high master clock frequency of 50 MHz, this image sensor can capture and process images at a fast rate, making it suitable for applications that require real-time image processing.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

Being a CMOS image sensor, it offers low power consumption, high integration, and high image quality, making it a versatile and efficient choice for various imaging applications.

Minimum Supply Voltage: 1.7 V

The minimum supply voltage of 1.7V ensures that the image sensor can operate efficiently even in low power scenarios, making it suitable for applications where power consumption is a concern.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this image sensor can withstand high temperatures, ensuring reliable performance in various environmental conditions.

Horizontal Pixel: 1280

Having a high horizontal pixel count of 1280 results in higher resolution images, enabling detailed image capture and processing, making it suitable for applications requiring high-quality images.

Output Range: 0.40-1.50V

The wide output range of 0.40-1.50V provides flexibility in signal processing and ensures compatibility with a variety of systems, making it a versatile choice for different applications.

Output Type: DIGITAL VOLTAGE

The digital voltage output type simplifies signal processing and interfacing with digital systems, offering ease of integration and compatibility with modern digital devices.

Minimum Operating Temperature: -30 °C

With a minimum operating temperature of -30 °C, this image sensor can function in cold environments, expanding its usability in applications that require operation in low temperatures.

Maximum Operating Current: 90 mA

The maximum operating current of 90mA indicates low power consumption, making this image sensor energy-efficient and suitable for battery-powered devices or applications where power efficiency is crucial.

Dynamic Range: 71.1 dB

A high dynamic range of 71.1dB allows the image sensor to capture a wide range of light intensities accurately, resulting in high-quality images with detailed contrast and color reproduction.

Vertical Pixel: 960

The vertical pixel count of 960 contributes to the overall image resolution, enabling the sensor to capture detailed images with clarity and precision, making it ideal for applications requiring high-resolution imaging.

Optical Format (inch): 1/3

The optical format of 1/3 inch provides compatibility with a wide range of lenses and optical systems, offering flexibility in designing imaging systems using this sensor in various applications.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface type simplifies the connection and communication with external devices, enabling easy integration into systems that utilize this interface standard, enhancing interoperability and ease of use.

Frame Rate: 54 fps

With a high frame rate of 54 frames per second, this image sensor can capture fast-moving objects or scenes with smooth motion, making it suitable for applications requiring high-speed imaging or video recording.

Array Type: FRAME

Being a frame array type sensor allows for simultaneous capture of all pixels in the sensor array, enabling quick image acquisition and processing, making it suitable for applications that require fast image capture.

Technical Specifications

Image Sensors AR0135CS2M25SUD20 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT ANALOG VOLTAGE OF 2.5 V TO 3.1 V

Array Type:

FRAME

Dynamic Range:

71.1 dB

Frame Rate:

54 fps

Horizontal Pixel:

1280

Master Clock:

50 MHz

Maximum Operating Current:

90 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Pixel Size (um):

3.75

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Vertical Pixel:

960

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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