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NOIH2SM1000S-HWC

Onsemi

NOIH2SM1000S-HWC by Onsemi

NOIH2SM1000S-HWC by Onsemi is a 1024x1024 CMOS image sensor with 18x18 um pixel size. Operating at temperatures from -40 to 85 °C, it has a power supply of 3.3V and output range of 2.20-2.60V. Ideal for applications requiring digital voltage output in a ceramic housing with surface mounting feature.

Median Price

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Lifecycle Status

Suppliers In-Stock

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In-Stock Inventory

1k+

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Digiode

USA . 1,066 parts In-Stock

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Vyrian

USA . 256 parts In-Stock

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Problanco Electronics

Mexico . 7,999 parts In-Stock

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TANS Electronics

Latvia . 6,485 parts In-Stock

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Kulean Microsystems

USA . 2,714 parts In-Stock

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SupplyDigital Components

Austria . 2,546 parts In-Stock

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Corphita

USA . 1,563 parts In-Stock

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Corohmni

South Africa . 124 parts In-Stock

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UHIMA Technologies

Türkiye . 21 parts In-Stock

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Overview

Experience the ultimate in imaging technology with the NOIH2SM1000S-HWC from Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability with their image sensors. Ideal for a wide range of applications, this image sensor offers unparalleled performance and precision. With a compact design and advanced features, customers can expect exceptional value and benefits with this product. Upgrade your imaging capabilities today with the NOIH2SM1000S-HWC by Onsemi.

Feature Benefit Bullets

Pixel Size (um): 18X18

Higher pixel size allows for more light to be captured, resulting in better image quality and clarity.

Body Width: 29.21 inch

Compact body width makes it easy to integrate into various devices without taking up too much space.

Power Supplies (V): 3.3

Efficient power supply requirement of 3.3V helps in reducing overall power consumption.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

The CMOS sensor type offers high image quality, low noise, and low power consumption, making it a reliable choice for imaging applications.

Package Shape or Style: SQUARE

Square package shape allows for easy integration and mounting in devices, providing a secure fit.

Maximum Operating Temperature: 85 °C

Higher maximum operating temperature ensures the sensor can withstand varying environmental conditions.

Horizontal Pixel: 1024

High horizontal pixel count results in detailed and high-resolution images.

Output Range: 2.20-2.60V

Stable output voltage range ensures consistent and reliable digital voltage output.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies signal processing and integration into digital systems.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for reliable performance in cold environments.

Maximum Operating Current: 41 mA

Moderate operating current ensures efficient power usage and prolongs battery life in portable devices.

Housing: CERAMIC

Durable ceramic housing provides protection to the sensor, making it suitable for rugged applications.

Vertical Pixel: 1024

High vertical pixel count complements the horizontal pixels for detailed and high-quality image rendering.

Body Length/Diameter: 29.21 mm

Compact body length/diameter allows for easy integration and placement in devices.

Termination Type: SOLDER

Solder termination type provides secure connections, ensuring reliable performance and longevity.

Array Type: FRAME

Frame array type offers versatility in capturing different types of images and allows for creative image compositions.

Mounting Feature: SURFACE MOUNT

Surface mounting feature simplifies the installation process and improves overall product aesthetics.

Technical Specifications

Image Sensors NOIH2SM1000S-HWC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FRAME

Body Width:

29.21 inch

Body Height:

3.05 mm

Body Length/Diameter:

29.21 mm

Horizontal Pixel:

1024

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Current:

41 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

18X18

Power Supplies (V):

3.3

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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