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NOIP2SN1300A-QTI

Onsemi

NOIP2SN1300A-QTI by Onsemi

NOIP2SN1300A-QTI by Onsemi is a CMOS image sensor with 1280x1024 resolution, 4.80um pixel size, and 360 MHz master clock. It operates b/w -40 to 85°C and has a dynamic range of 60 dB. Ideal for high-speed imaging applications requiring a digital voltage output interface at up to 210 fps.

Median Price

$89.991

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 92 parts In-Stock

1+ parts

$100.070

100+ parts

$84.212

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92

$100.070

$84.212

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Chip1Stop

Japan . 806 parts In-Stock

1+ parts

$365.000

100+ parts

$165.000

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$136.000

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806

$365.000

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$136.000

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Verical

USA . 384 parts In-Stock

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$79.912

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384

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$79.912

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Rochester

USA . 64 parts In-Stock

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100+ parts

$79.410

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$71.050

10k+ parts

$66.870

64

-

$79.410

$71.050

$66.870

Distributors (In-Stock)

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Digiode

USA . 330 parts In-Stock

1+ parts

$95.066

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330

$95.066

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Vyrian

USA . 8,183 parts In-Stock

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Flip Electronics

USA . 389 parts In-Stock

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389

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Distributors (Availability)

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Corohmni

South Africa . 418 parts In-Stock

1+ parts

$80.850

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418

$80.850

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Corphita

USA . 2,248 parts In-Stock

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$90.063

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2,248

$90.063

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Problanco Electronics

Mexico . 7,396 parts In-Stock

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Kulean Microsystems

USA . 6,727 parts In-Stock

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SupplyDigital Components

Austria . 6,664 parts In-Stock

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TANS Electronics

Latvia . 5,819 parts In-Stock

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Perfect Parts

USA . 2,995 parts In-Stock

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2,995

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Authorized Procurement Solutions

USA . 1,500 parts In-Stock

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1,500

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GreenTree Electronics

Israel . 936 parts In-Stock

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UHIMA Technologies

Türkiye . 315 parts In-Stock

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Overview

Experience crystal-clear image quality like never before with the NOIP2SN1300A-QTI by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch performance and reliability in their image sensors. Ideal for a wide range of applications, this sensor offers exceptional value and benefits to customers seeking high-resolution images with a wide dynamic range. Elevate your imaging experience with the NOIP2SN1300A-QTI and see the world in a whole new light.

Feature Benefit Bullets

Pixel Size (um): 4.80X4.80

Larger pixel size allows for more light to be captured, resulting in better image quality and low light performance.

Maximum Supply Voltage: 1.9 V

Efficient power usage with a relatively low maximum supply voltage.

Master Clock: 360 MHz

High master clock frequency enables fast data processing and high frame rates.

Body Width: 14.22 inch

Compact size for easy integration into various devices or applications.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor technology provides high image quality and low power consumption.

Package Shape or Style: SQUARE

Square package shape for efficient use of space and easy mounting.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage for energy-efficient operation.

Maximum Operating Temperature: 85 °C

Wide operating temperature range for versatility in different environments.

Horizontal Pixel: 1280

High horizontal pixel count for detailed and sharp images.

Output Type: DIGITAL VOLTAGE

Digital output for easy interfacing with other digital components or systems.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures performance in extreme cold conditions.

Dynamic Range: 60 dB

Good dynamic range for capturing both bright and dark details in the image.

Vertical Pixel: 1024

High vertical pixel count for capturing detailed images.

Body Length/Diameter: 14.22 mm

Compact body size for easy integration and space-saving designs.

Spectral Response (nm): 400-1000

Wide spectral response range for capturing a variety of colors and details.

Optical Format (inch): 1/2

Standard optical format for compatibility with various lenses and optical systems.

Data Rate: 72 Mbps

High data rate for fast transfer of image data.

Termination Type: SOLDER

Solder termination for reliable and secure connections.

Output Interface Type: 4-WIRE INTERFACE

4-wire interface for easy communication with other components or devices.

Frame Rate: 210 fps

High frame rate for smooth and detailed video recording or streaming.

Array Type: FRAME

Frame array type for efficient image capturing and processing.

Mounting Feature: SURFACE MOUNT

Surface mount feature for easy and secure mounting on PCBs or other surfaces.

Technical Specifications

Image Sensors NOIP2SN1300A-QTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT 3.2 TO 3.4 V SUPPLY VOLTAGE, GLOBAL SHUTTER

Array Type:

FRAME

Body Width:

14.22 inch

Body Height:

2.28 mm

Body Length/Diameter:

14.22 mm

Data Rate:

72 Mbps

Dynamic Range:

60 dB

Frame Rate:

210 fps

Horizontal Pixel:

1280

Master Clock:

360 MHz

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/2

Output Interface Type:

4-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

4.80X4.80

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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